Method of fabricating a cantilever beam for a monolithic accelerometer

• US 4,670,092 A
• Filed: 04/18/1986
• Issued: 06/02/1987
• Est. Priority Date: 04/18/1986
• Status: Expired due to Term

• Current Assignee: Rockwell International Corporation
• Original Assignee: Rockwell International Corporation
• Inventors: Motamedi, Manouchehr E.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/853,319
• Time in Patent Office: 410 Days
• Field of Search: 156/643, 156/647, 156/649, 156/652, 156/653, 156/657, 156/659.1, 156/662, 252/79.1, 252/79.3, 252/79.4, 252/79.5, 29/580, 29/584, 29/586, 29/610 SG, 29/594, 29/595, 73/517 R, 73/720, 73/726, 338/2, 338/4, 338/42, 338/47, 357/26, 357/55
• US Class Current: 438/52
• CPC Class Codes: G01P 1/006 used for thermal compensation
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: H01L 21/0334 characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

A monolithic accelerometer is fabricated with an integral cantilever beam sensing element which is etched out of a silicon wafer from the back surface. A thermal silicon oxide is formed on both surfaces of a (100) silicon wafer. Silicon oxide is removed from the back surface in a pattern which defines the sides of the cantilever beam and the sides of an alignment groove. The width and orientation of the openings in the silicon oxide are selected to control the depth of etching when the wafer is subsequently etched with an anisotropic etchant. An integrated circuit is then formed on the front surface and dry etching is used to complete the groove and separate the sides of the beam from the wafer.

Claims

1. A method of fabricating a cantilever beam for a monolithic accelerometer comprising the steps of:

providing a silicon wafer having a front surface and a back surface in (100) planes;

providing a silicon oxide on said surfaces;

forming cantilever beam openings in said silicon dioxide on said back surface to define the sides of said cantilever beam, said openings being oriented parallel to the <

110>

or <

110>

directions of said silicon wafer and having a width less than that required to etch completely through said silicon wafer during the subsequent step of etching the back surface of said silicon wafer;

forming alignment openings in said silicon dioxide on said back surface to define alignment grooves, said alignment openings being oriented parallel to the <

110>

or <

110>

directions of said silicon wafer and having a width greater than that required to etch completely through said silicon wafer during the subsequent step of etching the back surface of said silicon wafer;

etching the back surface of said silicon wafer which is exposed by said beam and alignment openings in said silicon dioxide in an anisotropic etchant to form cantilever beam grooves and alignment grooves in said silicon wafer;

discontinuing said etching after the sides of said cantilever beam grooves have intersected each other and after said alignment grooves have extended to said front surface of said wafer;

aligning said cantilever beam grooves on said back surface with an integrated circuit pattern on said front surface by means of said alignment grooves;

fabricating an integrated circuit for said monolithic accelerometer on said front surface of said silicon wafer; and

etching said front surface through to said cantilever beam grooves to separate the sides of said cantilever beam from said wafer.

2. The method as claimed in claim 1, wherein said anisotropic etchant comprises a mixture of ethylenediamine, pyrocathechol, and water.

3. The method as claimed in claim 2 wherein said width of said cantilever beam openings is less than about two times the thickness of said silicon wafer, and wherein said width of said alignment openings is greater than about two times the thickness of said silicon wafer.

4. The method as claimed in claim 1 wherein said step of etching said front surface comprises dry etching said front surface.

5. The method as claimed in claim 1 wherein said cantilever beam openings are reduced in width in the locations adjacent outside corners of said cantilever beam to provide corner-protecting silicon dioxide and thereby compensate for undercutting of said corners during said step of etching said backside.

6. The method as claimed in claim 5 wherein the width of said beam openings is reduced by less than one-half in said locations adjacent outside corners.

7. The method as claimed in claim 1 wherein said anisotropic etchant comprises dry etching at an RF power level which provides anisotropic etching.