Semiconductor light emitting diode with high operating speed

• US 4,670,689 A
• Filed: 07/24/1985
• Issued: 06/02/1987
• Est. Priority Date: 07/24/1984
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Suzuki, Akira
• Primary Examiner(s): Moore, David K.
• Assistant Examiner(s): WIEDER, KENNETH A
• Application Number:
  US06/758,237
• Time in Patent Office: 678 Days
• Field of Search: 313/499, 313/506, 313/509, 357/15, 357/17
• US Class Current: 313/499
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

A semiconductor light emitting device comprises a laminated semiconductive structure including a substrate, an active layer thereon and a second layer adjacent the active layer remote from the substrate, the second layer having an inner region of high carrier concentration and an outer region of lower carrier concentration. An insulative layer is on the second layer, the insulative layer having a window coaxial with and larger than the inner region. A first electrode deposited on the insulative layer establishes an ohmic contact with the inner region of the second layer and a Schottky-barrier contact with the outer region. A second electrode is provided on the substrate opposite to the first electrode, the second electrode having a window for allowing light to leave therethrough.

Claims

1. A semiconductor light emitting device comprising:

a laminated semiconductive structure comprising a substrate, an active layer thereon and a second layer adjacent the active layer remote from the substrate, the second layer having an inner region of high carrier concentration and an outer region of lower carrier concentration;

an insulative layer on said second layer, the insulative layer having a window coaxial with and larger than said inner region; and

a first electrode on said insulative layer establishing an ohmic contact through said window with said inner region and a Schottky-barrier contact through said window with said outer region, and a second electrode on said substrate opposite to said first electrode, the second electrode having a window for allowing light to leave therethrough.

2. A semiconductor light emitting device as claimed in claim 1, wherein the carrier concentration of said inner region is equal to or higher than 1×

10¹⁸ cm^-3 and the carrier concentration of said outer region is lower than 1×

10¹⁸ cm^-3.

3. A semiconductor light emitting device as claimed in claim 1, wherein the carrier concentration of said outer region is lower than 1/10 of the carrier concentration of said inner region.

4. A semiconductor light emitting device as claimed in claim 1, wherein said second layer is of p-type conductivity, and wherein said laminated structure further comprises a third layer sandwiched between said active layer and said second layer, said third layer having an outer region of n-type conductivity identical in size to and forming a p-n junction with the outer region of said second layer.

5. A semiconductor light emitting device as claimed in claim 1, wherein said laminated structure further comprises a cladding layer between said active layer and said second layer.

6. A semiconductor light emitting device as claimed in claim 4, wherein said substrate and said active layer are of p-type conductivity, and said laminated structure further comprises a cladding layer of p-type conductivity between said p-type conductivity active layer and said n-type conductivity third layer.