Semiconductor module for a high-speed switching arrangement

• US 4,670,833 A
• Filed: 06/03/1985
• Issued: 06/02/1987
• Est. Priority Date: 06/01/1984
• Status: Expired due to Term

• Current Assignee: Anton Piller GmbH & Co. KG
• Original Assignee: Anton Piller GmbH & Co. KG
• Inventors: Sachs, Klaus
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US06/740,871
• Time in Patent Office: 729 Days
• Field of Search: 363/15, 363/16, 363/17, 363/124, 363/131, 363/132, 363/147, 361/56, 361/91, 361/111, 361/386, 361/414
• US Class Current: 363/132
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 7/00 Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H03K 17/04166 in bipolar transistor switches
• CPC Class Codes: H03K 17/08146 in bipolar transistor switches

Abstract

Electric semiconductor switching module for a switching arrangement with switching times of the order of magnitude of 100 ns and large currents. The switching arrangement features a parallel connection of active semiconductor switching elements and freewheel diodes, which are each arranged in direct proximity, and having a load connection of the semiconductor switching elements and freewheel diodes such that current flows in the same direction relative to the load connection through the semiconductor switching elements and the freewheel diodes. The connections for the direct current voltage source are designed with spatially closely adjacent conductors, in particular two conductor layers separated by an insulating layer. The conductors are arranged in direct proximity to the semiconductor switching elements and the freewheel diodes and the terminals of the semiconductor switching elements and the freewheel diodes are connected conductively with the conductors in such a way that current always flows through them in the same direction. It is also advisable that at least one smoothing capacitor is arranged directly on the switching module.

Claims

1. A semiconductor module for a high-speed power switching arrangement, the module comprising an active semiconductor switching elements and a freewheel diode each having first and second terminals, said first terminal of said semiconductor switching element and said first terminal of said freewheel diode being connected to each other and constituting a common terminal for connection to a load, a pair of conductor layers each connected to a respective one of said second terminals of said semiconductor switching element and said freewheel diode and each adapted to be connected to a respective one of the terminals of a direct current voltage source, said semiconductor switching element and said freewheel diode each being disposed in direct proximity to each other and to said pair of conductor layers, and an insulating layer between said conductor layers such that said conductor layers are disposed geometrically parallel and in direct proximity to each other, whereby upon said common terminal of said semiconductor switching element and said freewheel diode being connected to a load and therethrough to one of the terminals of a direct current voltage source and upon said conductor layers being connected to said respective terminals of said direct current voltage source, current flows relative to said common terminal in the same direction through said pair of conductor layers toward said semiconductor switching element and said freewheel diode, respectively.

2. A semiconductor module according to claim 1, in which a plurality of semiconductor switching elements and freewheel diodes are provided in sets each comprising a semiconductor switching element and a freewheel diode, with each semiconductor element and its associated freewheel diode being arranged directly alongside each other, and in which said conductor layers extend across said sets of semiconductor switching elements and freewheel diodes in direct proximity thereto.

3. A semiconductor module according to claim 1, in which said conductor layers are formed of metal sheets.

4. A semicondctor module according to claim 1, in which a multilayer circuit board is provided, and the insulating layer between said conductor layers is constituted by one layer of the multilayer circuit board.

5. A semiconductor module according to claim 2, in which said conductor layers are formed of metal sheets.

6. A semiconductor module according to claim 2, in which a multilayer circuit board is provided, and the insulating layer between said conductor layers is constituted by one layer of the multilayer circuit board.

7. A semiconductor module according to claim 1, in which said conductor layers are provided with connecting elements for connection of a smoothing capacitor thereto.

8. A semiconductor module according to claim 1, in which said conductor layers are provided in respective central regions thereof with mutually overlying elongated apertures, and connecting elements protrude from at least the edges of said conductor layers defining the boundaries of said apertures.

9. A semiconductor module according to claim 1, in which a plurality of semiconductor switching elements and freewheel diodes are provided in sets each comprising a semiconductor switching element and a freewheel diode, with each semiconductor switching element and its associated freewheel diode being arranged directly alongside each other, and in which at least one electrically insulating substrate plate is provided, said sets of semiconductor switching elements and freewheel diodes being arranged on said at least one electrically insulating subtrate plate.

10. A semiconductor module according to claim 9, in which said at least one substrate plate is provided on both faces thereof with a metallic coating and is arranged in contact with a thermal sink.

11. A semiconductor module according to claim 10, in which a plurality of said substrate plates are arranged in contact with a common thermal sink.

12. A semiconductor module according to claim 9, in which rigid connecting elements are provided, said semiconductor switching elements and said freewheel diodes having respective bond wires connected conductively to associated ones of said rigid connecting elements.

13. A semiconductor module according to claim 9, in which an insulating contact carrier plate extends over said sets of semiconductor switching elements and freewheel diodes, and terminal pins are mounted in said contact carrier plate.

14. A semiconductor module according to claim 13, in which openings are provided in said contact carrier plate, and bond wires of said semiconductor switching elements and said freewheel diodes extend through said openings, said openings having cross-sections which are large in comparison to the cross-sections of said bond wires.

15. A semiconductor module according to claim 12, in which a circuit board is provided, and holes are provided in said circuit board, said rigid connecting elements being received in said holes, and said holes being each connected conductively with a respective one of said conductor layers.

16. A semiconductor module according to claim 15, in which a third conductor layer is provided on said circuit board to constitute the load connection.

17. A semiconductor module according to claim 9, in which said semiconductor switching element and its associated freewheel diode in each set are connected in parallel, and in which in one half of said sets of semiconductor switching elements and freewheel diodes the cathode of each freewheel diode is connected to a first load point, while in the other half of said sets of semiconductor switching elements and freewheel diodes the anode of each freewheel diode is connected to a second load point, said two load points being connected via an inductance with a common load connection.

18. A semiconductor module according to claim 17, in which said inductance has the form of a conductor loop to which said common load connection is connected symmetrically.

19. A semiconductor module according to claim 1, in which said pair of conductor layers are superjacent one another.

20. A semiconductor module according to claim 2, in which said pair of conductor layers are superjacent one another.