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Image sensor manufacturing method

  • US 4,671,853 A
  • Filed: 02/12/1986
  • Issued: 06/09/1987
  • Est. Priority Date: 02/27/1985
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing image sensors which comprises the steps of:

  • forming a plurality of isolated electrodes, prepared from an opaque metal material, on one side of a transparent ceramic substrate;

    depositing an amorphous semiconductor layer over the plural isolated electrodes mounted on said one side of the transparent ceramic substrate; and

    mounting a common electrode on said amorphous semiconductor layer, wherein a plurality of photoelectric converting elements are defined by said common electrode, individual electrodes and the intervening amorphous semiconductor layer, after whose formation light beams are illuminated from the opposite side of said ceramic substrate, causing those portions of said amorphous semiconductor layer which are defined between said photoelectric converting elements to have high electric resistance.

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