Image sensor manufacturing method
First Claim
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1. A method of manufacturing image sensors which comprises the steps of:
- forming a plurality of isolated electrodes, prepared from an opaque metal material, on one side of a transparent ceramic substrate;
depositing an amorphous semiconductor layer over the plural isolated electrodes mounted on said one side of the transparent ceramic substrate; and
mounting a common electrode on said amorphous semiconductor layer, wherein a plurality of photoelectric converting elements are defined by said common electrode, individual electrodes and the intervening amorphous semiconductor layer, after whose formation light beams are illuminated from the opposite side of said ceramic substrate, causing those portions of said amorphous semiconductor layer which are defined between said photoelectric converting elements to have high electric resistance.
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Abstract
In a method of manufacturing image sensors, an electrode layer of an opaque metal material is formed on a transparent ceramic substrate and is patterned into individual electrodes in photoengraving process. An amorphous semiconductor layer is deposed over the electrodes formed on the substrate and a common electrode is formed on the amorphous semiconductor layer. The amorphous semiconductor layer is exposed with light rays through the substrate so that each portions of the layer which is located above surface regions of the substrate between the electrodes have high electric resistance.
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Citations
10 Claims
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1. A method of manufacturing image sensors which comprises the steps of:
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forming a plurality of isolated electrodes, prepared from an opaque metal material, on one side of a transparent ceramic substrate; depositing an amorphous semiconductor layer over the plural isolated electrodes mounted on said one side of the transparent ceramic substrate; and mounting a common electrode on said amorphous semiconductor layer, wherein a plurality of photoelectric converting elements are defined by said common electrode, individual electrodes and the intervening amorphous semiconductor layer, after whose formation light beams are illuminated from the opposite side of said ceramic substrate, causing those portions of said amorphous semiconductor layer which are defined between said photoelectric converting elements to have high electric resistance. - View Dependent Claims (2, 3, 4, 5, 8, 9, 10)
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6. A method of manufacturing image sensors which comprises the steps of:
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forming a common electrode on one side of a transparent ceramic substrate; depositing an amorphous semiconductor layer on the common electrode mounted on said one side of the transparent ceramic substrate; and mounting a plurality of isolated electrodes, prepared from an opaque metal material, on said amorphous semiconductor layer, wherein a plurality of photoelectric converting elements are defined by said common electrode, individual electrodes and amorphous semiconductor region interposed between said common electrode and individual electrodes, and the previously formed amorphous semiconductor layer is exposed with light beams through the ceramic substrate, thereby causing those portions of said amorphous semiconductor layer which are interposed between the adjacent photoelectric converting elements to have a high electric resistance. - View Dependent Claims (7)
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Specification