High frequency diverse semiconductor switch

• US 4,672,245 A
• Filed: 08/09/1985
• Issued: 06/09/1987
• Est. Priority Date: 10/30/1984
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Mori, Satoshi, Majumdar, Gourab
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): Davis, B. P.
• Application Number:
  US06/764,591
• Time in Patent Office: 669 Days
• Field of Search: 307/570, 307/574, 307/544, 307/571
• US Class Current: 327/375
• CPC Class Codes: H03K 17/0422 Anti-saturation measures
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

Provided is a power semiconductor device operable to be switched at high frequencies. The semiconductor device according to the present invention is applied to a three-terminal BIMOS power semiconductor device in which a MOS-FET (2) is connected in parallel with a bipolar transistor (3) while the gate of the MOS-FET (2) is connected with the base of the bipolar transistor (3) through a reference-voltage diode (6) and a fast switching diode (7) so that the operation of the semiconductor device can be controlled by one driving circuit (1).

Claims

1. A semiconductor device operable to be switched at high frequency, comprising,

a field-effect transistor (2) having first and second electrodes and a control electrode,

a bipolar transistor (3) having third, fourth and fifth electrodes, the fourth electrode being connected to said first electrode, and the fifth electrode being connected to said second electrode,

at least a reference-voltage diode being connected in a reverse direction and at least a first diode being connected in a forward direction in view of said control electrode in a series manner in said order between said control electrode and said third electrode,

a second diode being connected in parallel with a series-connected body of said reference-voltage diode and said first diode in said reverse direction in view of said control electrode, and

a single driving circuit for supplying a switching signal provided between said control electrode and a junction between said second electrode and said fifth electrode.

2. A semiconductor device in accordance with claim 1, wherein said first electrode is a drain terminal, said second electrode is a source terminal, said third electrode is a base electrode, said fourth electrode is a collector electrode and said fifth electrode is an emitter electrode.

3. A semiconductor device in accordance with claim 1, wherein said bipolar transistor is an npn-type transistor.

4. A semiconductor device in accordance with claim 1 further including a third diode,

said fourth electrode being connected with the cathode of said third diode, and

said fifth electrode being connected with the anode of said third diode.