High fill-factor ac-coupled x-y addressable Schottky photodiode array

• US 4,672,412 A
• Filed: 11/09/1983
• Issued: 06/09/1987
• Est. Priority Date: 11/09/1983
• Status: Expired due to Fees

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: General Electric Company
• Inventors: Wei, Ching-Yeu, Woodbury, Henry H.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Mintel, William A.
• Application Number:
  US06/549,936
• Time in Patent Office: 1,308 Days
• Field of Search: 357/15, 357/30, 357/30 H, 357/30 C, 357/32, 357/31, 357/45, 357/24, 357/23.1, 357/40
• US Class Current: 257/448
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14862 CID imagers
• CPC Class Codes: H01L 27/14875 Infrared CCD or CID imagers

Abstract

Each unit cell of a Schottky barrier photodiode imaging array comprises a Schottky metal electrode formed on a silicon substrate. The Schottky electrode is reverse biased with a pulse for beginning a sensing interval, following which the change in charge on the electrode is related to the quantity of incident infrared radiation. For X-Y addressable readout, a row electrode and a column electrode are capacitively coupled to each Schottky electrode and connected to row and column address lines. For low overlap capacitance and low stray capacitance, the row and column electrodes are concentric within each cell and coplanar above the Schottky electrode. Over the row and column electrodes is an address line insulating layer, and sets of row and column address lines are coplanar over this layer. Separate segments of each row address line extend between adjacent electrode portions of correspondingly adjacent unit cells, and each column address line extends across a plurality of unit cells between the row address line segments. The address lines are connected to the underlying readout electrodes through contact windows in the address line insulating layer.

Claims

1. A Schottky barrier infrared detector array comprising:

a semiconductor substrate having first and second separate surfaces;

a plurality of unit cells formed on said substrate and arranged in a pattern of rows and columns;

each of said unit cells including;

means disposed in said first surface for receiving incident radiation;

a photosensitive Schottky barrier metal electrode formed on said second surface of said semiconductor substrate and defining a Schottky junction therewith, and

a row electrode and a column electrode electrically insulated from said Schottky barrier metal electrode and capacitively coupled to said Sckottky barrier metal electrode, said row and column electrodes overlapping a substantial portion of said Schottky barrier metal electrode so as to achieve a high fill factor;

a set of row address lines each corresponding to a row of said plurality of unit cells and connected to the row electrodes of the unit cells of the corresponding row; and

a set of column address lines each corresponding to a column of said plurality of unit cells and connected to the column electrodes of the unit cells of the corresponding column.

2. The infrared detector array in accordance with claim 1, wherein within each unit cell said row and column electrodes are concentrically arranged with one of said row and column electrodes surrounding the other of said row and column electrodes such that at least said one of said row and column electrodes comprises a pair of generally diametrically opposed and electrically connected electrode portions.

3. The infrared detector array in accordance with claim 2, wherein said row and colum electrodes are substantially coplanar at a first level above said Schottky electrode.

4. The infrared detector array in accordance with claim 3, further comprising an address line insulating layer over said row electrode and said column electrode, said set of row address lines and said set of column address lines being substantially coplanar at a second level above said Schottky barrier metal electrode and spaced from said row electrode and column electrode by said address line insulating layer.

5. The infrared detector array in accordance with claim 4 wherein:

each line of one of said set of row address lines and said set of column address lines comprises a plurality of line segments extending between adjacent electrode portions of said row and column electrodes of corresponding adjacent unit cells, and electrically connected to said electrode portions of said one of said row and column electrodes through contact windows in said address line insulating layer, and wherein

each line of the other of said set of row address lines and said set of column address lines extends across a plurality of said unit cells through gaps between said segments of the lines of said one set, and is electrically connected through contact windows in said address line insulating layer to said other of said row and column electrodes of each of the unit cells of said plurality.

6. The infrared detector array in accordance with claim 5, wherein said diametrically opposed electrode portions are electrically connected by relatively narrow connecting portions for minimal overlap capacitance with the lines of said other of said line sets.

7. The infrared detector array in accordance with claim 1, wherein said semiconductor substrate comprises silicon.

13. The Schottky barrier infrared detector array of claim 1, further comprising an insulating layer overlying said Schottky barrier metal electrode.

14. The Schottky barrier infrared detector array of claim 1, wherein said insulating layer is disposed between said Schottky metal electrode and said row and column electrodes.

15. The Schottky barrier detector array of claim 1, wherein said Schottky barrier metal electrode overlaps said means disposed in said first surface for receiving incident radiation.

16. The Schottky barrier detector array of claim 15 wherein said means disposed in said first surface for receiving incident radiation is at least coextensive with said Schottky barrier metal electrode.

17. The Schottky barrier detector of claim 1, wherein:

said means disposed in said first surface for receiving incident radiation includes means for coupling incident infrared radiation to said Schottky junction for detection.

18. The Schottky barrier detector of claim 17, wherein:

said means for coupling incidents infrared radiation to said Schottky junction includes a portion of said semiconductor substrate between said first and second separate surfaces.

19. The Schottky barrier detector of claim 1 wherein said first and second surfaces comprise first and second opposed surfaces.

8. A Schottky barrier infrared detector element comprising:

a semiconductor substrate having a first surface and a second surface, said first surface being separate from said second surface;

a photosensitive Schottky barrier metal electrode formed on said first surface of said semiconductor substrate and defining a Schottky junction therewith;

said second surface of said semiconductor substrate including means for receiving incident radiation and

at least one readout electrode overlying a substantial portion of said Schottky barrier metal electrode and being electrically insulated from and capacitively coupled to said Schottky barrier metal electrode.

9. The Schottky barrier infrared detector element in accordance with claim 8, wherein said semiconductor substrate comprises silicon.

11. The Schottky barrier infrared detector element in accordance with claim 8, further including a second readout electrode, said second electrode including a pair of generally diametrically opposed and electrically connected portions positioned on opposite sides of a portion of said first electrode.

10. A method of operating a Schottky photodiode having a semiconductor substrate including first and second separate surface, a Schottky barrier metal electrode formed on said first surface of semiconductor substrate and defining a Schottky junction therewith and having means for receiving incident radiation disposed in said second surface of said semiconductor substrate, said method comprising:

capacitively coupling to a substantial portion of the Schottky barrier metal electrode an electrical pulse of voltage magnitude and polarity appropriate to reverse bias the photodiode with a charge quantity therein; and

exposing a second surface of said semiconductor substrate to incident radiation,

coupling an infrared portion of said incident radiation to said Schottky junction,

sensing the infrared portion of the incident radiation,

determining the magnitude of charge remaining in the photodiode at the end of a sensing and integration interval by capacitively coupling a signal from the Schottky barrier metal electrode.

12. An infrared imaging array disposed in a semiconductor substrate and exhibiting a high fill-factor including a plurality of closely spaced Schottky barrier infrared detector elements each comprising:

a portion of said semiconductor substrate having a first radiation receiving surface and a second detector surface said first radiation receiving surface and second detector surfaces being disposed on nonadjacent surfaces of said semiconductor substrate;

a photosensitive Schottky barrier metal electrode disposed in registry with said second detector surface and forming a Schottky barrier junction therewith; and

a readout electrode overlapping a substantial portion of said Schottky barrier metal electrode and being electrically insulated from and capacitively coupled to said Schottky barrier metal electrode, and

said first radiation receiving surface comprising greater than 30 percent of the corresponding substrate surface.

20. The Schottky barrier detector of claim 12 wherein said first radiation receiving surface and said second detector surface are disposed on opposite surfaces of said semiconductor substrate.