Semiconductor vibration detecting structure
First Claim
1. A semiconductor vibration detecting structure having a semiconductor substrate (1) of a first conductivity type, a plurality of semiconductor layers (3, 5, 7, 9) of the second conductivity type opposite to that of the substrate diffused in the substrate, and a cantilever (13) comprising a root portion fixed to the substrate (1) through an insulator film and a movable beam (19) projecting from the root portion, the structure comprising:
- a fixed capacitor portion (31) formed between the root portion of said cantilever and said semiconductor substrate through the insulator film; and
a variable capacitor portion (29) formed between the movable beam (19) of the cantilever and said semiconductor substrate, said cantilever gradually deflecting upward from the surface of said semiconductor layer towards the distal end of the cantilever.
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Accused Products
Abstract
A semiconductor vibration detecting structure formed on a semiconductor substrate and a method of manufacturing the same in which the curvature of the cantilever of the vibration detecting structure in the direction gradually deviating from the surface of the semiconductor substrate can be determined by the thickness of the upper nitride layer for regulating the curvature of the cantilever, with the thicknesses of the other layers constituting the cantilever and the length thereof being constant. In the semiconductor vibration detecting structure according to the present invention, even if vibrations having relatively large vibration levels are applied to the detecting structure, the cantilever of the vibration detecting structure vibrates well but never hits the surface of the semiconductor substrate, thus enabling a wide rage of mechanical vibrations to be detected with a high sensitivity.
29 Citations
14 Claims
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1. A semiconductor vibration detecting structure having a semiconductor substrate (1) of a first conductivity type, a plurality of semiconductor layers (3, 5, 7, 9) of the second conductivity type opposite to that of the substrate diffused in the substrate, and a cantilever (13) comprising a root portion fixed to the substrate (1) through an insulator film and a movable beam (19) projecting from the root portion, the structure comprising:
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a fixed capacitor portion (31) formed between the root portion of said cantilever and said semiconductor substrate through the insulator film; and a variable capacitor portion (29) formed between the movable beam (19) of the cantilever and said semiconductor substrate, said cantilever gradually deflecting upward from the surface of said semiconductor layer towards the distal end of the cantilever. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification