Vertical DRAM cell and method

• US 4,673,962 A
• Filed: 03/21/1985
• Issued: 06/16/1987
• Est. Priority Date: 03/21/1985
• Status: Expired due to Fees

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Chatterjee, Pallab K., Shah, Ashwin H.
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US06/714,589
• Time in Patent Office: 817 Days
• Field of Search: 357/23.6, 357/41, 357/45, 357/55, 357/51, 357/59, 365/149
• US Class Current: 257/68
• CPC Class Codes: H10B 12/395 the transistor being vertical
• CPC Class Codes: Y10S 257/911 Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device

Abstract

DRAM cells and arrays of cells on a semiconductor substrate, together with methods of fabrication, are disclosed wherein the cells are formed in pairs or quartets by excavating a trench or two trenches through the cell elements to split an original cell into two or four cells during the fabrication. The cells include vertical field effect transistors and capacitors along the trench sidewalls with word lines and bit lines crossing over the cells.

Claims

1. A memory cell comprising:

a substrate having a trench formed therein;

an insulating layer formed on one sidewall of said trench;

a semiconductive layer formed on said insulating layer, said semiconductive layer including a drain region, a source region, and a channel region disposed between said source and drain regions;

a gate adjacent to said insulating layer in the region of said insulating layer adjacent to said channel region; and

a heavily doped region formed in said substrate adjacent to said the portion of said insulating layer which is adjacent to said source region, said heavily doped region having a conductivity type opposite that of said substrate.

2. The cell of claim 1 wherein said heavily doped region is maintained at a fixed electric potential.

3. A device including two memory cells comprising:

a substrate having a trench formed therein;

an first insulating layer formed on a first sidewall of said trench;

a first semiconductive layer formed on said first insulating layer, said semiconductive layer including a drain region, a source region, and a channel region disposed between said source and drain regions;

a first gate adjacent to said first insulating layer in the region of said first insulating layer adjacent to said channel region of said first semiconductive layer;

an second insulating layer formed on a second sidewall of said trench;

a second semiconductive layer formed on said second insulating layer, said semiconductive layer including a drain region, a source region, and a channel region disposed between said source and drain regions;

a second gate adjacent to said second insulating layer in the region of said second insulating layer adjacent to said channel region of said second semiconductive layer.

4. The cell of claim 3 further comprising a heavily doped region formed in said substrate adjacent to said the portion of said insulating layers which are adjacent to said source regions, said heavily doped region having a conductivity type opposite that of said substrate.

5. The cell of claim 4 wherein said heavily doped region is maintained at a fixed electric potential.

6. A memory array comprising:

a first plurality of parallel conductors formed on the surface of a substrate;

a second plurality of parallel conductors formed on the said surface of said substrate perpendicular to said first plurality of parallel conductors;

a plurality of memory cells formed at the intersections of said conductors, each cell comprising;

a trench formed in said substrate;

an insulating layer formed on one sidewall of said trench;

a semiconductive layer formed on said insulating layer, said semiconductive layer including a drain region conductively connected to one of said first plurality of conductors, a source region, and a channel region disposed between said source and drain regions;

a gate conductively connected to one of said second conductors adjacent to said insulating layer in the region of said insulating layer adjacent to said channel region.

7. The cell of claim 6 further comprising a heavily doped region formed in said substrate adjacent to said the portion of said insulating layer which is adjacent to said source region, said heavily doped region having a conductivity type opposite that of said substrate.

8. The cell of claim 7 wherein said heavily doped region is maintained at a fixed electric potential.

9. A memory array comprising:

a first plurality of parallel conductors formed on the surface of a substrate;

a second plurality of parallel conductors formed on said surface of said substrate perpendicular to said first plurality of parallel conductors;

a plurality of memory cells formed at the intersections of said conductors, a pair of cells comprising;

a trench formed in said substrate;

a first insulating layer formed on a first sidewall of said trench;

a first semiconductive layer formed on said first insulating layer, said semiconductive layer including a drain region conductively connected to one of said first plurality of parallel conductors, a source region, and a channel region disposed between said source and drain regions;

a first gate adjacent to said first insulating layer in the region of said first insulating layer adjacent to said channel region of said first semiconductive layer, said first gate connected to a first one of said second plurality of parallel conductors;

an second insulating layer formed on a second sidewall of said trench;

a second semiconductive layer formed on said second insulating layer, said semiconductive layer including a drain region conductively connected to one of said first plurality of parallel conductors, a source region, and a channel region disposed between said source and drain regions;

a second gate adjacent to said second insulating layer in the region of said second insulating layer adjacent to said channel region of said semiconductive layer, said second gate connected to a second one of said second plurality of parallel conductors.

10. The cell of claim 9 further comprising a heavily doped region formed in said substrate adjacent to said the portion of said insulating layers which are adjacent to said source regions, said heavily doped region having a conductivity type opposite that of said substrate.

11. The cell of claim 10 wherein said heavily doped region is maintained at a fixed electric potential.