Chemoresistive gas sensor

• US 4,674,320 A
• Filed: 09/30/1985
• Issued: 06/23/1987
• Est. Priority Date: 09/30/1985
• Status: Expired due to Fees

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: United States Department of Energy (Government of the United States of America)
• Inventors: Hirschfeld, Tomas B.
• Primary Examiner(s): Kreitman, Stephen A.
• Application Number:
  US06/781,543
• Time in Patent Office: 631 Days
• Field of Search: 73/23, 73/27 R, 338/34, 338/35, 422/98, 324/71.5, 340/634, 427/102, 427/103
• US Class Current: 73/31.06
• CPC Class Codes: G01N 27/126 comprising organic polymers

Abstract

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Claims

1. An apparatus for sensing gaseous contaminants, the apparatus comprising:

a layer of organic semiconductor on a surface of an associated substrate material, the associated substrate material being nonconductive;

a first electrode and a second electrode attached to the layer of organic semiconductor at spaced locations on the surface of the associated substrate material, the first electrode and second electrode being connected to an associated voltage source; and

a plurality of islands of high conductivity material dispersed within the layer of organic semiconductor, the plurality of islands having an average interisland spacing such that a detectable amount of current traverses between the first electrode and the second electrode by electron tunneling between tne islands of high conductivity material.

2. The apparatus of claim 1 wherein said average interisland spacing is between about 10-80 Angstroms.

3. The apparatus of claim 2 wherein said high conductivity material is gold.

4. The apparatus of claim 3 wherein said organic semiconductor is selected from the group consisting of phthalocyanine, halogenated phthalocyanine, and sulfonated phthalocyanine.

5. The apparatus of claim 4 wherein said organic semiconductor is phthalocyanine.

6. The apparatus of claim 5 wherein said average interisland spacing is between about 50-60 Angstroms.

7. The apparatus of claim 6 wherein said associated substrate material is sapphire.

8. A method of constructing a chemoresistive gas sensor, the method comprising the steps of:

depositing a layer of high conductivity material on a surface of an associated substrate material, the associated substrate material being nonconductive;

heating the layer of high conductivity material so that mobile droplets of the high conductivity material form on the surface of the associated substrate;

cooling the associated substrate material so that the mobile droplets of high conductivity material solidify to form islands;

depositing a layer of organic semiconductor over the islands of high conductivity material on the surface of the associated substrate material; and

attaching electrical electrodes to the layer of organic semiconductor at spaced locations.

9. The method of claim 8 wherein said layer of high conductivity material is between about 100-300 Angstroms thick.

10. The method of claim 9 wherein said high conductivity material is gold and said organic semiconductor is phthalocyanine.

11. The method of claim 10 wherein said step of heating includes raising the temperature of said associated substrate material to between about 150°

-200°

C.