Method of manufacturing an electrically variable piezoelectric hybrid capacitor
First Claim
1. A method of constructing an electrically variable piezoelectric hybrid microelectronic circuit capacitor, comprising the steps of:
- forming a first capacitor plate on a surface of a substrate;
forming a ridge on said surface of said substrate by a hybrid microelectronic circuit manufacturing process, whereby the upper surface of said ridge is positioned a predetermined distance above said first capacitor plate;
forming a second capacitor plate on a first surface of a piezoelectric wafer;
forming a first control plate on a second surface of said piezoelectric wafer;
placing said piezoelectric wafer on said ridge;
applying a force substantially at the center of said piezoelectric wafer, thereby causing said piezoelectric wafer to arch; and
bonding said piezoelectric wafer to said ridge whereby said piezoelectric wafer maintains an arched shape when said force is removed.
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Accused Products
Abstract
An electrically variable three terminal monomorphic piezoelectric capacitor is manufactured with thick or thin film hybrid microelectronic circuit technology. A first capacitor plate and a ridge, which substantially surrounds and extends above the first capacitor plate, are formed on the surface of a substrate. A monomorphic piezoelectric wafer having a control plate and a second capacitor plate on opposing surfaces is bonded to the upper surface of the ridge. During bonding, a force is applied at the center of the wafer which fixes a permanent bow in the wafer in the direction of the first capacitor plate. A four terminal monomorphic embodiment and three and four terminal bimorphic embodiments are also described.
37 Citations
9 Claims
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1. A method of constructing an electrically variable piezoelectric hybrid microelectronic circuit capacitor, comprising the steps of:
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forming a first capacitor plate on a surface of a substrate; forming a ridge on said surface of said substrate by a hybrid microelectronic circuit manufacturing process, whereby the upper surface of said ridge is positioned a predetermined distance above said first capacitor plate; forming a second capacitor plate on a first surface of a piezoelectric wafer; forming a first control plate on a second surface of said piezoelectric wafer; placing said piezoelectric wafer on said ridge; applying a force substantially at the center of said piezoelectric wafer, thereby causing said piezoelectric wafer to arch; and bonding said piezoelectric wafer to said ridge whereby said piezoelectric wafer maintains an arched shape when said force is removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification