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Method for planarizing semiconductor substrates

  • US 4,676,868 A
  • Filed: 04/23/1986
  • Issued: 06/30/1987
  • Est. Priority Date: 04/23/1986
  • Status: Expired due to Term
First Claim
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1. A method for planarizing an insulating layer and exposing underlying topographic features, said method comprising:

  • applying a planarization layer over the insulating layer to thickness sufficient to form a substantially level surface;

    uniformly etching the planarization layer with a first plasma down to about the interface between the planarization layer and the insulating layer; and

    uniformly etching the remaining planarization layer and insulating layer with a second plasma selected to preferentially etch the insulating layer.

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