Method of thermal treatment of a wafer in an evacuated environment

• US 4,680,061 A
• Filed: 04/07/1982
• Issued: 07/14/1987
• Est. Priority Date: 12/21/1979
• Status: Expired due to Term

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Associates, Inc.
• Inventors: Lamont, Lawrence T. Jr.
• Primary Examiner(s): Roy, Upendra
• Application Number:
  US06/366,433
• Time in Patent Office: 1,924 Days
• Field of Search: 148/1.5, 250/398, 250/492.1, 357/91, 427/38
• US Class Current: 250/398
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/56 Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/68707 the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Abstract

Semiconductor wafers are coated with metallic film by supporting the wafers individually adjacent a ring-shaped sputtering source. A vacuum chamber sputter coating apparatus has a number of work stations therein, at least one of which includes the ring-shaped sputtering source. Also included is a load lock; and an intermittently rotating vertical plate-like wafer carrier therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clips. A chamber door is provided with a vacuum chuck to grasp a wafer presented vertically by a blade-like elevator which cooperates with a cassette and conveyor moving the cassette along a horizontal path below the chamber entrance. Closure of the door inserts the wafer into the clips within the carrier and chamber, and the reverse operation extracts a wafer previously coated at a sputtering work station. Both surfaces of the wafer can be accessed by processing equipment, for example, for wafer heating or cooling at some of the work stations. Thermal transfer for wafer heating or cooling is accomplished by introducing a gas at a pressure of approximately 100 to 1000 microns in a region between the wafer and a heating element or heat sink. The gas conducts thermal energy between the wafer and the heating element or heat sink.

Claims

1. The method of treating a wafer-like article in a vacuum chamber comprising the steps of positioning the article over a heat-exchanging structure at a station within the vacuum chamber, pushing the article against said structure and maintaining a gas under pressure which is substantially less than atmospheric pressure between the article and said structure to facilitate the conduction of heat between the article and said structure by said gas, said gas being inhibited from flowing from between said structure and article while said article is being pressed against said structure and said heat conduction by said gas is being facilitated.

2. The method of claim 1 which further includes the steps of introducing said gas via an orifice betweeen the article and said structure upon pushing said article against said structure, and while heat is transferred between said structure and the facing surface of said article, treating the other surface of said article.

3. The method of claim 1 including the step of cooling the support plate whereby the wafer being treated is cooled by heat conduction from the wafer through the gas to the support plate being cooled.

4. The method of claim 1 wherein the gas is provided between the article and the support plate at a pressure which is above the pressure in said vacuum chamber but which is below atmospheric pressure.

5. The method of claim 1 which further includes the step of discontinuing the pushing of said article against said structure upon completion of article treatment at said station to admit gas remaining between said wafer and heat-exchanging member into said vacuum chamber.

6. The method of claim 1 in which said article is positioned over said heat-exchanging structure so that a substantial portion of the article surface facing said structure is closely adjacent but spaced therefrom.

7. The method of claim 1 in which said pushing of said article is effected peripherally of said article.

8. The method of claim 1 in which said pushing of said article is resiliently performed by means of spring pressure.

9. The method of claim 1 in which gas pressure between said article and said heat-exchanging structure is substantially less than atmospheric pressure as well as greater than the pressure within said vacuum chamber.

10. The method of claim 5 in which said gas between said member and said article is inhibited from flowing into said vacuum chamber while said article is being pushed against said structure and transferral of heat between said article and said heat-exchanging member conduction through said gas is being facilitated.

11. The method of claim 5 which further includes the step of moving the article from said station after discontinuing said pushing of said article against said structure and said admission of said gas into said chamber, and positioning a further article over said structure while said station is at chamber pressure.

12. The method of treating a flat article in a vacuum chamber comprising the steps of:

maintaining a vacuum chamber pressure within said vacuum chamber at a level substantially less than atmospheric pressure;

providing, at a work station communicating with said vacuum chamber, a heat-exchanging structure having a heat-exchanging-surface;

positioning the article adjacent said heat-exchanging structure so that a peripheral portion of a surface of said article contacts said heat-exchanging surface;

maintaining gas pressure between said article and heat-exchanging surface by means of an orifice opening therebetween and communicating with a source of pressurized gas while applying pressure to hold at least said peripheral portion of the article against said heat-exchanging structure to contain said gas sufficiently between said article and heat-exchanging surface so that said gas pressure is significantly above said vacuum chamber pressure, yet substantially less than atmospheric pressure, whereby conduction of heat between said article and said heat-exchanging surface by said gas can be more efficient than with gas at said vacuum chamber pressure; and

releasing said pressure after the heat transfer treatment has been completed, whereby gas remaining between said article and heat-exchanging surface is admitted into said vacuum chamber.

13. The method of claim 12 in which said pressure is applied peripherally of said article, whereby the surface of said article opposite the surface which faces said heat-exchanging surface is accessible for processing during said heat-transfer treatment.

14. The method of claim 12 in which said heat-exchanging structure exchanges heat between said gas between said article and said heat-exchanging surface and the atmosphere external to said vacuum processing chamber.

15. The method of claim 12 in which a substantial portion of the article surface which faces said heat-exchanging surface is spaced therefrom to define a gas-containable space there between.

16. The method of claim 12 which further includes the step of controlling the temperature of said heat-exchanging structure, whereby the temperature of said gas between said article and structure as well as that of said article may be regulated.

17. The method of claim 12 in which said releasing of said pressure after completion of treatment is completed instantaneously.

18. The method of claim 12 which further includes the step of maintaining at least a portion of said heat-exchanging structure at atmospheric pressure.

19. The method of claim 18 which further includes the step of maintaining at least said heat-exchanging surface of said structure at vacuum chamber pressure when no article is positioned over said surface.