Microscopic size, thermal conductivity type, air or gas absolute pressure sensor

• US 4,682,503 A
• Filed: 05/16/1986
• Issued: 07/28/1987
• Est. Priority Date: 05/16/1986
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Satren, Ernest A., Higashi, Robert E., Johnson, Robert G., James, Steven D.
• Primary Examiner(s): Woodiel, Donald O.
• Application Number:
  US06/863,892
• Time in Patent Office: 438 Days
• Field of Search: 73/755, 73/204, 357/55, 338/318, 338/319
• US Class Current: 73/755
• CPC Class Codes: G01L 11/002 by thermal means, e.g. hypsometer
• CPC Class Codes: G01L 21/12 measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
• CPC Class Codes: G01N 27/18 caused by changes in the thermal conductivity of a surrounding material to be tested G01N27/20 takes precedence

Abstract

A microscopic size absolute pressure sensor for air or gas of the thermal conductivity type, a silicon nitride covered silicon microchip has an elongated V-groove anisotropically etched in the silicon with a heated silicon nitride bridge element extending over the surface of the V-groove.

Claims

1. A microbridge absolute pressure sensor of the thermal conductivity type for gas or air comprising:

a silicon microchip having formed thereon a thin film layer of dielectric, said chip having its surface lying in a (100) plane and having a <

110>

direction;

two opposing L-shaped cuts through the dielectric, the L-shaped cuts each having a long and a short element with the long elements parallel to the <

110>

direction of the silicon, said cuts defining a dielectric bridging element therebetween,

said microbridge having an anisotropically etched groove in the silicon beneath the bridging element and the L-shaped cuts, the cuts exposing the groove through the dielectric layer,

said dielectric bridging element having two opposing termini, the two opposing termini of the dielectric bridging element being joined to the chip between the long element of one cut and the short element of the other cut at one terminus and between the short element of the one cut and the long element of the other cut at the other terminus, and

an elongated electrically conductive sensor-heater element formed in and traversing the length of said dielectric bridging element for heating said bridging element, said elongated element entering said bridging element at said one terminus and leaving said bridging element at said other terminus.

2. The sensor according to claim 1 in which the dielectric is silicon nitride.

3. The sensor according to claim 1 in which the groove is a V-shaped groove whose sides terminate on (111) planes.

4. The sensor according to claim 1 in which the groove terminates on the bottom on a heavily doped etch-resistant layer of boron-doped silicon.

5. The sensor according to claim 1 wherein said cuts through the dielectric have a width of about 2 microns.

6. The sensor according to claim 1 wherein the bridging element has a width of about 6 microns and a length of less than 100 microns.

7. The sensor according to claim 1 wherein the groove in the silicon is about 10 microns wide, has a depth of about 7 microns, and a length of less than 100 microns.

8. A microbridge absolute pressure sensor for air or gas comprising:

a silicon microbridge having formed thereon a thin film layer of silicon nitride, said chip having its surface lying in a (100) plane, said chip having a <

110>

direction along said plane,

an elongated V-shaped groove anisotropically etched into said silicon from said surface, said elongated groove having elongated edges oriented in said <

110>

direction,

said microchip having an elongated silicon mitride bridging element which has its long edges parallel and proximate to said groove elongated edges, the bridging element having on it a sensor element, said bridging element being attached to said layer at diagonally opposite segments of the long edges,

an electrically resistance sensor strip formed in said bridging element and extending the length of said bridging element, said strip being adapted to be heated by current flowing therethrough to raise the temperature of said bridging element.

9. The sensor according to claim 8 in which the V-shaped groove has sides terminating on (111) planes.

10. The sensor according to claim 8 in which the bridging element has a width of about 6 microns and a length of less than 100 microns.

11. The sensor according to claim 8 in which the V-shaped groove is about 10 microns wide at the surface, has a depth of about 7 microns, and a length of less than 100 microns.

12. An absolute pressure sensor of the thermal conductivity type for gas or air comprising:

a silicon microchip having a surface lying in a (100) plane and having a <

110>

direction, said microchip comprising a cold supporting substrate means for a heated element;

an anisotropically etched elongated V-groove in said surface parallel to the <

110>

direction;

a heated element at the surface of said groove, said element comprising an elongated thin film dielectric strip slightly narrower than said groove, said strip having a major portion of its edges in close proximity to but spaced from the adjacent cold supporting substrate, said strip having ends fastened to said microchip surface, said heated element including means responsive to temperature changes in the film due to thermal conductance changes in the gas.

13. The sensor according to claim 12 in which the elongated thin film dielectric strip is of silicon nitride.

14. The sensor according to claim 12 in which the V-groove has sides terminating on (111) planes.

15. The sensor according to claim 12 in which the dielectric strip has a width of about 6 microns and a length of less than 100 microns.

16. The sensor according to claim 12 in which the V-groove has a width of about 10 microns at the surface, and the dielectric strip has a width of about 6 microns leaving a space of about 2 microns between the strip and the silicon along the length of the strip.

17. The sensor according to claim 12 and further comprising:

a thin film metal strip comprising a portion of said cold supporting substrate means, said thin film metal strip having an edge positioned parallel with and in close proximity to said heated element, said thin film metal strip mounted to said microchip surface in a position that said metal film edge extends from said surface over a portion of said groove, said metal strip being in good thermal contact with said microchip so that it comprises a portion of said cold supporting substrate means.

18. An absolute pressure sensor of the thermal conductivity type for gas or air comprising:

a silicon microchip having a surface, said microchip comprising a cold supporting substrate means for a heated element;

an etched elongated groove in said surface;

a heated element at the surface of said groove, said element comprising an elongated thin film dielectric strip slightly narrower than said groove, said strip having a major portion of its edges in close proximity to but spaced from the adjacent cold supporting substrate, said strip having ends fastened to said microchip surface, said heated element including means responsive to temperature changes in the film due to thermal conductance changes in the gas; and

,

said cold supporting substrate means further comprising a thin film metal strip having an edge positioned parallel with and in close proximity to said heated element, said thin film metal strip mounted to said microchip surface in a position that said metal film edge extends from said surface over a portion of said groove, said metal strip being in good thermal contact with said microchip so that it comprises a portion of said cold supporting substrate means.

19. The sensor according to claim 18 in which the elongated thin film dielectric strip is of silicon nitride.

20. The sensor according to claim 18 in which the dielectric strip has a width of about 6 microns and a length of less than 100 microns.