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Electrophotosensitive member having alternating amorphous semiconductor layers

  • US 4,683,184 A
  • Filed: 07/10/1985
  • Issued: 07/28/1987
  • Est. Priority Date: 07/16/1984
  • Status: Expired due to Term
First Claim
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1. An electrophotosensitive member which comprises on a conductive substrate, a plurality of amorphous silicon layers and a plurality of amorphous silicon:

  • germanium layers wherein each of said amorphous silicon;

    germanium layers is interposed between two of said amorphous silicon layers so as not to come into direct contact with the substrate and surface and includes about 2 to 70 atomic % of germanium.

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