Electrophotosensitive member having alternating amorphous semiconductor layers

• US 4,683,184 A
• Filed: 07/10/1985
• Issued: 07/28/1987
• Est. Priority Date: 07/16/1984
• Status: Expired due to Term

• Current Assignee: Minolta Camera Kabushiki Kaisha
• Original Assignee: Minolta Camera Kabushiki Kaisha
• Inventors: Natsuhara, Toshiya, Doi, Isao, Osawa, Izumi
• Primary Examiner(s): Goodrow, John L.
• Application Number:
  US06/753,587
• Time in Patent Office: 748 Days
• Field of Search: 430/57, 430/84, 430/60, 430/95
• US Class Current: 430/57.5
• CPC Class Codes: G03G 5/08 characterised by the photoconductive material being inorganic
• CPC Class Codes: G03G 5/08264 comprising seven or more silicon-based layers

Abstract

An electrophotosensitive member for use in electrophotography includes a plurality of amorphous silicon and amorphous silicon:germanium layers that are arranged in an alternating fashion. The two outermost layers are made up of amorphous silicon so that each amorphous silicon:germanium layer is sandwiched between two amorphous silicon layers.

Claims

1. An electrophotosensitive member which comprises on a conductive substrate, a plurality of amorphous silicon layers and a plurality of amorphous silicon:

germanium layers wherein each of said amorphous silicon;

germanium layers is interposed between two of said amorphous silicon layers so as not to come into direct contact with the substrate and surface and includes about 2 to 70 atomic % of germanium.

2. An electrophotosensitive member as claimed in claim 1 wherein each of said amorphous silicon:

germanium layers has a thickness of about 50 Å

to 20 μ

m and each of said amorphous silicon layers has a thickness of about 1 to 50 μ

m.

3. An electrophotosensitive member as claimed in claim 2 wherein the total thickness of the amorphous silicon:

germanium layers is about 100 Å

to 30 μ

m.

4. An electrophotosensitive member as claimed in claim 1 wherein each of said amorphous silicon layers and each of said amorphous silicon:

germanium layers has a P-type conductivity in the vicinity of the substrate and an intrinsic or N-type conductivity in the vicinity of the surface layer.

5. An electrophotosensitive member as claimed in claim 4 wherein said P-type layers include less than about 200 ppm of an impurity element in Group IIIA of the Periodic Table.

6. An electrophotosensitive member as claimed in claim 4 wherein said N-type layers include less than about 50 ppm of an impurity element in Group VA of the Periodic Table.

7. An electrophotosensitive member as claimed in claim 1 wherein each of said amorphous silicon layers and each of said amorphous silicon:

germaniun layers has an intrinsic or N-type conductivity in the vicinity of the substrate and a P-type conductivity in the vicinity of the surface layer.

8. An electrophotosensitive member as claimed in claim 7 wherein said P-type layers include less than about 200 ppm of an impurity element in Group IIIA of the Periodic Table.

9. An electrophotosensitive member as claimed in claim 7 wherein said N-type layers include less than about 50 ppm of an impurity element in Group VA of the Periodic Table.

10. An electrophotosensitive member as claimed in claim 1 wherein each of said amorphous silicon layers includes elements selected from a group consisting of carbon, oxygen and nitrogen.

11. An electrophotosensitive member as claimed in claim 1 wherein each of said amorphous silicon:

germanium layers includes elements selected from a group consisting of carbon, oxygen and nitrogen.

12. An electrophotosensitive member as claimed in claim 1 wherein each of said amorphous silicon:

germanium layers has a depletion layer.

13. An electrophotosensitive member which comprises on a conductive substrate, a plurality of amorphous silicon layers and a plurality of amorphous silicon:

germanium layers wherein each of said amorphous silicon;

germanium layers is interposed between two of said amorphous silicon layers and one of said amorphous silicon layers is formed on the conductive substrate and another of said amorphous silicon layers forms a surface layer, each of said amorphous silicon;

germanium layers including about 2 to 70 atomic % of germanium and having a thickness of about 50 Å

to 20 μ

m, each of said amorphous silicon layers having a thickness of about 1 to 50 μ

m, and said amorphous silicon;

germanium layers having a total thickness of about 100 Å

to 30 μ

m.