Dynamic ram cell with MOS trench capacitor in CMOS
First Claim
1. A dynamic random access memory cell array comprising:
- a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion,a region disposed in said upper portion of said substrate, having a conductivity type opposite to that of said substrate,at least one access device disposed in said region, andat least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate said storage means being electrically isolated from said region and said upper and lower portions.
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Abstract
This invention relates generally to Dynamic Random Access Memory (DRAM) cells and more particularly relates to a DRAM cell wherein the storage capacitor of the cell is disposed in a trench formed in a semiconductor substrate. Still more particularly, it relates to a DRAM cell wherein at least a portion of the substrate is heavily doped and forms the counterelectrode of the storage capacitor while a heavily doped polycrystalline plug disposed in the trench capacitor forms the other electrode of the storage capacitor. The DRAM cell includes a field effect access transistor disposed in a well which is opposite in conductivity type to that of the substrate. The well itself is formed in a lightly doped portion of the substrate and may be n or p-type conductivity with the other portions of the cell having conductivity types appropriate for devices fabricated in the CMOS environment. The trench capacitor extends from the surface of the well through the well and lightly doped substrate portion into the heavily doped portion of the substrate. The electrode disposed in the trench is directly connected to the source/drain of the access transistor.
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Citations
46 Claims
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1. A dynamic random access memory cell array comprising:
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a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate, having a conductivity type opposite to that of said substrate, at least one access device disposed in said region, and at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate said storage means being electrically isolated from said region and said upper and lower portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A dynamic random access memory cell comprising
a counterelectrode of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said counterelectrode having a conductivity type opposite to that of said counterelectrode, at least one access device disposed in said region, at least one trench extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said counterelectrode, and, at least one storage electrode in said at least one trench, said storage electrode being disposed in insulated spaced relationship with said counterelectrode.
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29. A dynamic random access memory cell comprising
a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, and, at least one storage electrode disposed in insulated spaced relationship with and in said at least one trench.
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37. A dynamic random access memory cell array formed in a semiconductor substrate having a first conductivity type, said substrate having therein a region of semiconductor material of the opposite conductivity type disposed in a lightly doped portion of said substrate,
an access transistor located in said region, a trench storage capacitor extending from the surface of said region through said region and said lightly doped portion into the remaining portion of said substrate, said capacitor having a dielectric layer and a first electrode disposed in said trench, said substrate and said region forming a second electrode of said capacitor, and means located over said region and electrically connecting said access transistor and said first electrode.
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41. A dynamic random access memory cell array formed in a semiconductor substrate of a first conductivity type having a region formed in a portion thereof said region having a conductivity type opposite to that of said substrate,
an access transistor formed in said region, a storage capacitor having a vertically disposed storage electrode and a vertically disposed dielectric layer, said storage electrode and said dielectric layer extending from the surface of said region through said region and into said substrate, and an electrical interconnection overlying said region and electrically connecting said access transistor and said storage electrode.
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44. A dynamic random access memory cell array formed in a substrate of a first conductivity type having therein a region of opposite conductivity type disposed in a lower conductivity upper portion of said substrate,
an access transistor extending laterally in said region, a first electrode extending vertically from the surface of said region through said region and into said substrate, a dielectric layer in contact with said first electrode and extending vertically through said region and into said substrate, a second electrode comprised of a portion of said region and a portion of said substrate and being insulated from said first electrode by said dielectric layer, and an electrical interconnection located over said region and electrically interconnecting said access transistor and said first electrode.
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46. A dynamic random access memory cell array formed in a single crystal semiconductor substrate having a first conductivity type, said substrate having therein a semiconductor region of an opposite conductivity type disposed in a low conductivity upper portion of said substrate, said substrate having a laterally extending lower portion thereof which is highly doped to render it conductive,
a trench extending vertically through said region and said upper portion into said highly doped portion of said single crystal substrate, said trench defining the geometry of a capacitor for storing charge thereon, an access transistor formed in said region, a dielectric layer formed on the inner surface of said trench, said dielectric layer being in contact with said highly doped portion of said substrate, a first electrode formed in said trench in contact with said dielectric layer, said first electrode extending into said highly doped portion of said substrate and being separated therefrom by said dielectric layer, a second electrode comprised of said region and said highly doped portion of said single crystal substrate which contacts said dielectric layer, and a conductive layer electrically connecting said access transistor and said capacitor.
Specification