Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series

• US 4,692,643 A
• Filed: 10/26/1984
• Issued: 09/08/1987
• Est. Priority Date: 10/28/1983
• Status: Expired due to Term

• Current Assignee: Hitachi Medical Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi, Ltd.
• Inventors: Fukui, Hiroshi, Sato, Masayoshi, Watanabe, Kouzou, Tokunaga, Norikazu, Amano, Hisao
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): Phan, Trong Q.
• Application Number:
  US06/665,132
• Time in Patent Office: 1,047 Days
• Field of Search: 307/254, 307/252 C, 307/584, 307/570, 307/571, 307/585, 307/481, 307/575, 307/577, 307/242, 307/239, 307/304
• US Class Current: 327/436
• CPC Class Codes: H03K 17/102 in field-effect transistor switches

Abstract

A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semiconductor switching device, respectively. A control signal is applied to the control terminal of the output-nearest switching element. The semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row; and a second capacitive element connected between the output terminal and input terminal of the input-nearest switching element. At least the switching elements (S₂ -S_n) have insulating gates, respectively.

Claims

1. A semiconductor switching device including a row of a plurality of switching elements (S_l -S_n) connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element S_n and an output terminal of the output-nearest switching element S_l among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, said switching elements (S₂ -S_n) having insulating gates, respectively,

wherein a constant voltage element is connected between a control terminal and one of the inpt and output terminals of at least each of said switching elements other than the output-nearest one, each said constant voltage element being arranged so that it will be in series with said first and second capacitive elements when said switching elements are turned-off.

2. A semiconductor switching device according to claim 1, wherein said plurality of switching elements (S₂ -S_n) include MOSFET'"'"'S.

3. A semiconductor switching device according to claim 2, wherein each constant voltage element is connected between a control gate and an electrode of said MOSFET included in each of said switching elements.

4. A semiconductor switching device according to claim 2, wherein said first and second capacitive elements are connected in series with resistors, respectively.

5. A semiconductor switching device according to claim 4, wherein rectifying elements are connected between the respective connection points of said first capacitive elements and said resistors, and the respective sources of the MOSFET'"'"'s adjacent to the respective series connections of said first capacitive element and said resistors;

and between the connection point of said second capacitive element and said corresponding resistor and the input terminal of said input-nearest switching element, respectively.

6. A semiconductor switching device according to claim 1, wherein said first and second capacitive elements are connected in series with resistors.

7. A semiconductor switching device according to claim 6, wherein rectifying elements are connected in parallel with said resistors respectively and in the forward direction during said off-period of the semiconductor switching device.

8. A semiconductor switching device according to claim 1, wherein a rectifying element is connected in forward direction between the input terminal of said input-nearest switching element and the input terminal of said semiconductor switching device.

9. A semiconductor switching device according to claim 1, further comprising a series connection of voltage-dividing elements provided correspondingly to the respective switching elements and each connected between the input and output terminals of the associated switching element.

10. A semiconductor switching device including a row of a plurality of switching elements (S_l -S_n) connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element (S_n) and an output terminal of the output-nearest switching element (S₁) among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, at least said switching elements (S₂ -S_n) having insulating gates, respectively,

wherein said first and second capacitive elements are connected in series with resistors, and

wherein the device includes further resistors, connected in series with respective constant voltage elements, with the series connection of each of said first and second capacitive elements with said resistors being in parallel with the series connection of said further resistors and respective constant voltage elements.

11. A semiconductor switching device including a row of a plurality of switching elements (S₁ -S_n) connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element (S_n) and an output terminal of the output-nearest switching element (S₁) among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearest switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, at least said switching elements (S₂ -S_n) having insulating gates, respectively,

wherein said first and second capacitive elements are connected in series with resistors, and

wherein the switching device includes further resistors, connected in series with respective constant voltage elements, with said first and second capacitive elements being connected in parallel with the series connection of the further resistors and respective constant voltage elements.

12. A semiconductor switching device including a row of a plurality of switching elements (S₁ -S_n) connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element (S_n) and an output terminal of the output-nearest switching element (S₁) among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of said output-nearest switching element, wherein said semiconductor switching device comprises:

MOSFET'"'"'s included in at least said switching elements (S₂ -S_n), respectively;

a first plurality of series connections each of which includes a capacitive element and a resistor, each connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among said switching element row;

a second series connection of a capacitive element and a resistor connected between the input terminal and the output terminal of said input-nearest switching element;

a rectifying element connected in forward direction between the input terminal of said input-nearest switching element and the input terminal of said semiconductor switching device;

constant voltage elements connected between the respective gates and respective sources of said MOSFET'"'"'s;

rectifying elements connected in parallel with said resistors, respectively and in the forward direction during the off-period of said semiconductor switching device; and

series connections each of which includes each of said resistors and each of said constant voltage elements, connected in parallel with said first and second series connections.

13. A semiconductor switching device according to claim 12, wherein each said constant voltage element is arranged so that it will be in series with said first and second series connections when said switching elements are turned-off.

14. A semiconductor switching device according to claim 12, further comprising a plurality of third series connections coupled respectively in parallel with said plurality of first series connection, each of said third series connections including a resistor and a constant voltage element and a fourth series connection coupled in parallel with said second series connection and including a resistor and a constant-voltage element.

15. A semiconductor switching device including a row of a plurality of switching elements connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element and an output terminal of the output-nearest switching element among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises:

a first plurality of series connections each of which includes a capacitive element and a resistor, each connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among said switching element row;

each of at least said switching elements other than the output-nearest one including a MOSFET having two electrodes defining a current path thereof and a control gate which acts as the control terminal of that switching element and a GTO having an anode and a gate connected, respectively, to the electrodes of said MOSFET;

a second series connection of a capacitive element and a resistor connected between the input terminal and the output terminal of said input-nearest switching element;

a rectifying element connected in forward direction between the input terminal of said input-nearest switching element and the input terminal of said semiconductor switching device;

constant voltage elements connected between the respective gates and respective sources of said MOSFET'"'"'s;

rectifying elements connected in parallel with said resistors, respectively and in the forward direction during the off-period of said semiconductor switching device; and

series connections each of which includes each of said resistors and each of said constant voltage elements, connected in parallel with said first and second series connections.

16. A semiconductor switching device according to claim 15, wherein each said constant voltage element is arranged so that it will be in series with said first and second series connections when said switching elements are turned-off.

17. A semiconductor switching device according to claim 15, further comprising a plurality of third series connections coupled respectively in parallel with said plurality of first series connection, each of said third series connections including a resistor and a constant voltage element and a fourth series connection coupled in parallel with said second series connection and including a resistor and a constant voltage element.

18. A semiconductor switching device including a row of a plurality of switching elements S₁ -S_n connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element (S_n) and an output terminal of the output-nearest switching element (S₁) among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein, said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, said switching elements (S₂ -S_n) having insulating gates, respectively,

wherein each of said switching elements other than the output-nearest one includes a MOSFET having two electrodes defining a current path thereof and a control gate which acts as the control terminal of that switching element and a GTO having an anode and a gate connected, respectively, to the electrodes of the MOSFET.

19. A semiconductor switching device according to claim 18, wherein a constant voltage element is connected between a control gate and an electrode of said MOSFET included in each of the switching elements.

20. A semiconductor switching device according to claim 18, wherein each of said first capacitive elements and said second capacitive elements is connected in series with a resistor.

21. A semiconductor switching device according to claim 20, wherein rectifying elements are connected between the respective connection points of said first capacitive elements and said resistors, and the respective sources of the MOSFET'"'"'s adjacent to the respective series connections of said first capacitive elements and said resistors;

and between the connection point of said second capacitive element and said corresponding resistor, and the input terminal of said input-nearest switching element, respectively.

22. A semiconductor switching device according to claim 21, wherein said rectifying elements are Zener diodes, respectively.

23. A semiconductor switching device according to claim 20, wherein constant voltage elements are connected in parallel with said rectifying elements, respectively.

24. A semiconductor switching device including a row of a plurality of switching elements S₁ -S_n connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element (S_n) and an output terminal of the output-nearest switching element (S₁) among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, said switching elements (S₂ -S_n) having insulating gates, respectively,

further comprising means for producing said control signal which is variable between two levels and applied to the control terminal of said output-nearest switching element thereby defining its ON-period when said control signal is at one of the two levels and means for periodically changing said control signal of the one level to the other level for a short period of time.

25. A semiconductor switching device including a row of a plurality of switching elements S₁ -S_n connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element (S_n) and an output terminal of the output-nearest switching element (S₁) among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, at least said switching elements (S₂ -S_n) having insulating gates, respectively,

further comprising a series connection of voltage-dividing elements provided correspondingly to the respective switching elements other than said output-nearest one, and having opposite terminals of said series connection connected to the input and output terminals, respectively, of said switching device, while respective junctions of said voltage dividing elements are connected respectively to the control terminals of said switching elements other than said output-nearest one.

26. A semiconductor switching device according to claim 25, wherein said opposite terminals of said series connection are connected through respective constant-voltage elements to the input and output terminals of said switching device.