Method of bonding semiconductor devices together

• US 4,693,770 A
• Filed: 06/24/1986
• Issued: 09/15/1987
• Est. Priority Date: 07/05/1985
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Hatada, Kenzo
• Primary Examiner(s): Dawson, Robert A.
• Application Number:
  US06/877,967
• Time in Patent Office: 448 Days
• Field of Search: 29/829, 29/830, 29/840, 56/150, 56/151, 228/180.2, 228/188
• US Class Current: 156/151
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/11003 for holding or transferring the bump preform
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: Y10T 29/49144 : by metal fusion

Abstract

Disclosed is a method of realizing high-density and inexpensive semiconductor apparatus by joining the electrodes of two semiconductor devices. A metal bump formed on a substrate is transferred and joined onto the electrode of first semiconductor device, and electrode of second semiconductor device and the metal bump transferred and joined on the first semiconductor device are positioned, pressed and heated, thereby joining the two semiconductor devices together.

Claims

1. A method of fabricating a semiconductor device comprising the steps of:

conducting alignment of a metal bump and an electrode of a first semiconductor device, said metal bump being formed on a substrate;

pressing the electrode of the first semiconductor device to said metal bump on the substrate and removing the metal bump from said substrate so that said metal bump is joined to said electrode of the first semiconductor device;

conducting alignment of the metal bump joined to the first semiconductor device and an electrode of a second semiconductor device; and

pressing the metal bump to the electrode of the second semiconductor device so that the electrodes of said first and second semiconductor devices are joined together.

2. The method of fabricating a semiconductor device of claim 1, wherein said metal bump is made of Au, Al, Ni, Ag or solder.

3. The method of fabricating a semiconductor device of claim 1, wherein said electrode is formed on a surface area of the semiconductor device.

4. The method of fabricating a semiconductor device of claim 1, wherein resin layer is formed on said electrode of said first semiconductor device.

5. The method of fabricating a semiconductor device of claim 4, wherein said resin layer has function as adhesive.

6. The method of fabricating a semiconductor device of claim 1, wherein resin layer is formed on said metal bump to be joined to the electrode of said first semiconductor device.

7. The method of fabricating a semiconductor device of claim 6, wherein said resin layer has function as adhesive.

8. The method of fabricating a semiconductor device of claim 1, wherein said substrate has an opening at a position corresponding to the electrode of the semiconductor device and said bump is formed at the opening by electro-plating.

9. A method of fabricating a semiconductor device comprising the steps of:

forming a metal bump by electro-plating an opening formed on a substrate which has said opening at a position corresponding to an electrode of a first semiconductor device;

conducting alignment of a metal bump and an electrode of a first semiconductor device, said metal bump being formed on a substrate;

pressing the electrode of the first semiconductor device to said metal bump on the substrate and removing the metal bump from said substrate so that said metal bump is joined to said electrode of the first semiconductor device;

conducting alignment of the metal bump joined to the first semiconductor device and an electrode of a second semiconductor device;

pressing the metal bump to the electrode of the second semiconductor device so that the electrodes of said first and second semiconductor devices are joined together; and

forming new bump by electro-plating the opening of the substrate.

10. The method of fabricating a semiconductor device of claim 9, wherein said substrate includes an insulating substrate, a conductive film formed on said substrate, and a heat resistant film formed on said film and having said opening.

11. The method of fabricating a semiconductor device of claim 10, wherein said conductive film is either ITO film or Pt film.

12. A method of fabricating a semiconductor device comprising the steps of:

transferring and joining a metal bump formed on a substrate onto an electrode of a semiconductor device; and

pressing and heating by positioning an electrode of a second semiconductor device haivng an electrode opposing to the electrode of said first semiconductor device with the metal bump transferred and joined on the electrodes of said first semiconductor device,

whereby the electrode of the first semiconductor device and the electrode of the second semiconductor device are joined by way of said metal bump.

13. The method of fabricating a semiconductor device of claim 12, wherein same metal bump is made of Au, Al, Ni, Ag or solder.

14. The method of fabricating a semiconductor device of claim 12, wherein the electrode of said first semiconductor device is formed on the surface region of said semiconductor device.

15. The method of fabricating a semiconductor device of claim 12, wherein a resin layer is formed on the electrode of said first semiconductor device.

16. The method of fabricating a semiconductor device of claim 12, wherein a resin layer is formed on said metal bump.