Method of making a semiconductor laser CRT

• US 4,695,332 A
• Filed: 05/28/1985
• Issued: 09/22/1987
• Est. Priority Date: 12/27/1982
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Inventors: Gordon, Eugene I., Levy, Uri
• Primary Examiner(s): Straub, Gary P.
• Application Number:
  US06/737,787
• Time in Patent Office: 847 Days
• Field of Search: 156/624, 156/605, 156/DIG. 80, 156/610, 148/171, 148/DIG. 95, 29/576 E, 427/53.1, 427/87, 372/43, 372/74
• US Class Current: 438/26
• CPC Class Codes: H01S 5/04 Processes or apparatus for excitation, e.g. pumping, e.g. by electron beamsH01S5/06 takes precedence
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
• CPC Class Codes: Y10S 148/095 Laser devices

Abstract

Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam direction is essentially parallel to the e-beam direction and hence is scannable.

Claims

1. A method of fabricating a target for an electron-beam-pumped semiconductor laser, comprising the steps of:

providing a single crystal semiconductor body,

epitaxially growing on the body a plurality of layers including;

a thin, buffer layer of a relatively wide bandgap semiconductor on the body;

a thicker, narrower bandgap active layer on the buffer layer; and

a much thicker, wider bandgap cavity-length-adjusting layer on the active layer,

forming on the cavity-length-adjusting layer a first mirror which is partially transmissive at the optical wavelength of the laser,

affixing a transparent substrate to the first mirror,

removing the single crystal substrate to expose the buffer layer, and

forming on the buffer layer a second mirror, including a metal layer, which is highly reflecting at the optical wavelength.

2. The method of claim 1 wherein said body comprises GaAs and said growing step comprises epitaxially growing Al_x Ga_1-x As buffer layer, an Al_y Ga_1-y As active layer, and an Al_z Ga_1-z As adjusting layer so that y<

x, z and each of said layers has the same conductivity type.

3. The method of claim 2 wherein said substrate comprises sapphire.