Process and apparatus for the low pressure chemical vapor deposition of thin films

• US 4,699,805 A
• Filed: 07/03/1986
• Issued: 10/13/1987
• Est. Priority Date: 07/03/1986
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Seelbach, Christian A., Ingle, William M., Goetz, Carl A.
• Primary Examiner(s): Smith, John D.
• Assistant Examiner(s): Dang, Vi D.
• Application Number:
  US06/881,988
• Time in Patent Office: 467 Days
• Field of Search: 427/91, 118/733, 118/715
• US Class Current: 438/680
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes

Abstract

A process and apparatus for LPCVD of thin metallic films is disclosed. The apparatus includes a U-shaped injection tube through which high molecular weight reactants are injected into a reaction chamber. The input and output ends of the U-shaped tube are coupled to a removeable feedthrough plate which, in turn, is coupled to the end cap which seals one end of the reaction chamber. A deposition surface is placed in the chamber through a second end cap at the opposite end of the chamber. The output end of the U-shaped injection tube is coupled to a vacuum pump and the high molecular weight reactant is drawn through the injection tube and dispersed in the reaction chamber through a plurality of holes in the input side of the injection tube.

Claims

1. A process for the low pressure chemical vapor deposition of a metallic film which comprises the steps of:

providing a tubular reaction chamber having first and second ends;

providing first and second end caps for sealing said first and second ends, respectively;

sealing said first and second end caps to said first and second ends;

providing a U-shaped injector tube having input and exhaust ends coupled to and allowing passage of reactants through said first end cap, into said reaction chamber, and out said first end cap, said injector tube including a plurality of injection holes positioned within said reaction chamber;

inserting a deposition surface into said reaction chamber;

coupling said reaction chamber to a vacuum pump through said first end cap and reducing the pressure in said reaction chamber;

heating said deposition surface to an elevated temperature;

coupling said input end of said injector tube to a source of a high molecular weight metallic reactant compound;

coupling said exhaust end of said injector tube to a vacuum pump and pumping said metallic reactant compound through said injector tube to cause injection of said metallic compound reactant through said plurality of injection holes;

controlling the amount of said metallic reactant compound exhausted through said exhaust end;

injecting a second reactant into said reaction chamber; and

reacting said metallic reactant compound and said second reactant to deposit a metallic film on said deposition surface.

2. The process of claim 1 wherein said metallic reactant compound comprises a metallic halide.

3. The process of claim 1 further comprising the steps of:

providing a feedthrough plate coupled to said first end cap; and

coupling said U-shaped injector tube to said feedthrough plate.

4. The process of claim 3 further including the step of shaping said U-shaped injector tube to couple to said feedthrough plate and position said plurality of injection holes along the bottom of said reaction chamber parallel to an axis along said tubular reaction chamber.

5. The process of claim 1 wherein the step of controlling the amount comprises placing a throttle valve in series with said exhaust end and adjusting said throttle valve.

6. The process of claim 1 wherein said step of injecting a second reactant comprises coupling said second reactant through said first end cap.

7. The process of claim 6 wherein said second reactant is coupled to a second injector tube.

8. The process of claim 1 wherein said step of injecting a second reactant comprises coupling said second reactant through said second end cap.

9. The process of claim 1 wherein said deposition surface is inserted into said reaction chamber through said second end.

10. The process of claim 1 further comprising the step of inserting a liner into said reaction chamber concentric with said tubular reaction chamber.

13. The apparatus of claim 10 further comprising a second injector tube coupled through said feedthrough plate to a second reactant source.

11. A reaction apparatus for the low pressure chemical vapor deposition of thin films which comprises:

a tubular reaction chamber having first and second ends;

a first end cap sealed to said first end and having means for inserting a deposition surface therethrough and for enclosing said first end;

a second end cap sealed to said second end and having a feedthrough plate removably joined thereto for enclosing said second end;

a U-shaped injector tube positioned within said chamber including input and output ends coupled through said feedthrough plate and a plurality of injection holes located in said chamber;

means for coupling said input end to a reactant source;

means for coupling said output end to a vacuum pump;

means for reducing the pressure in said chamber; and

means for heating a deposition substrate positioned in said chamber.

12. The apparatus of claim 11 wherein said U-shaped injector tube is coupled to said feedthrough plate and is curved to position said plurality of holes near the bottom of said chamber and substantially parallel to the axis thereof.

14. The apparatus of claim 12 further comprising a second injector tube coupled through said feedthrough plate to a second reactant source and having a portion substantially parallel to a portion of said U-shaped injector tube.

15. The apparatus of claim 11 further comprising means to inject a second reactant into said chamber through said first end.

16. The apparatus of claim 11 wherein said feedthrough plate is sealed to said second end cap.

17. The apparatus of claim 11 further comprising a throttle valve coupled in series between said output end and said vacuum pump.

18. The apparatus of claim 11 further comprising a tubular sleeve inserted in said chamber and concentric therewith.

19. The apparatus of claim 11 further comprising means for generating a reactant plasma in said chamber.

20. A process for the low pressure chemical vapor deposition of a film which comprises the steps of:

providing a tubular reaction chamber having first and second ends;

providing first and second end caps for sealing said first and second ends, respectively;

providing a U-shaped injector tube having input and exhaust ends coupled to and allowing passage of reactants through said first end cap, into said reaction chamber, and out said first end cap, said injector tube including a plurality of injection holes positioned within said reaction chamber, and out said first end cap, said injector tube including a plurality of injection holes positioned within said reaction chamber;

inserting a deposition surface into said reaction chamber;

reducing the pressure in said reaction chamber;

heating said deposition surface to an elevated temperture;

coupling said input end of said injector tube to a source of at least one reactant;

coupling said exhaust end of said injector tube to a vacuum pump and pumping said reactant through said injector tube to cause injection of said reactant through said plurality of injection holes;

controlling the amount of said reactant exhausted through said exhaust end; and

reacting said reactant to deposit a film on said deposition surface.

21. The process of claim 20 wherein said reactant is a high molecular weight reactant.

22. The process of claim 21 wherein said high molecular weight reactant comprises a reactant having a molecular weight greater than 100.

23. The process of claim 21 wherein said film comprises a refractory metallic film and said high molecular weight reactant comprises a metal halide.

24. The process of claim 20 further comprising the step of injecting a second reactant through a second injection tube coupled through said first end cap.

25. The process of claim 20 further comprising the step of injecting a second reactant through a second injection tube coupled through said second end cap.