Process for making junction field-effect transistors

• US 4,700,461 A
• Filed: 09/29/1986
• Issued: 10/20/1987
• Est. Priority Date: 09/29/1986
• Status: Expired due to Term

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Tsaur, Bor-Yeu, Choi, Hong-Kyun
• Primary Examiner(s): Ozaki, George T.
• Application Number:
  US06/913,418
• Time in Patent Office: 386 Days
• Field of Search: 29/571, 29/576 B, 29/576 E, 29/576 W, 148/188, 148/171
• US Class Current: 438/149
• CPC Class Codes: H01L 21/033 comprising inorganic layers
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76281 Lateral isolation by selective oxidation of silicon
• CPC Class Codes: H01L 21/86 the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
• CPC Class Codes: H01L 29/0843 Source or drain regions of field-effect devices
• CPC Class Codes: H01L 29/66893 with a PN junction gate, i.e. JFET
• CPC Class Codes: H01L 29/8086 Thin film JFET's

Abstract

A self-aligned integrated JFET device is described wherein an oxide extension region and a doped polysilicon gate is used as part of a self-aligned mask to form drain and source regions. Asymmetric JFETs for power circuit applications can be made in accordance with the invention. Additionally, complementary enhancement mode JFETs can be made in accordance with the invention, for low power consumption and excellent radiation-hardened characteristics.

Claims

1. A method of forming a junction field-effect transistor on a substrate comprising the steps of:

(a) forming an island of silicon on, or in, said substrate;

(b) doping said island with one type of conductivity dopant;

(c) forming two closely spaced regions of opposite conductivity in said island extending to an upper surface of said island;

(d) forming oxide extension regions over said opposite conductivity regions;

(e) forming opposite conductivity regions on either side of said oxide extension regions and between said regions;

(f) forming a silicon gate region of said one type conductivity over said oxide extension regions, and the opposite conductivity region therebetween, to form a shallow p-n junction adjacent the interface between the silicon gate region and the underlying region between the oxide extensions; and

(g) forming source and drain regions of opposite conductivity at either side of the gate region using the oxide extension regions and gate region as a mask.

2. The method of claim 1 wherein the substrate comprises bulk single crystal silicon or silicon-on-insulator.

3. The method of claim 2 wherein the silicon-on-insulator substrate is silicon-on-sapphire.

4. The method of claim 1 wherein the source and drain regions are of n-type conductivity and the gate region of p-type conductivity.

5. The method of claim 1 wherein the source and drain regions are of p-type conductivity and the gate region of n-type conductivity.

6. The method of claim 1 wherein the precursor for forming the substrate in step (a) is a single crystalline silicon film formed by zone melting and recrystallization of a polysilicon film formed on an SiO₂ /Si substrate.

7. The method of claim 1 wherein the island is isolated by local oxidation of selected areas of silicon.

8. The method of claim 1 wherein the island is isolated by etching of silicon to form mesa structures down to the upper substrate surface.

9. The method of claim 1 wherein the oxide extension regions are formed by selective oxidation.

10. The method of claim 1 wherein the regions formed in step (c) are formed by ion-implantation of dopant ions.

11. The method of claim 1 wherein the regions formed in steps (c) and (d) are asymmetric in width.

12. A method of forming an integrated junction field-effect device on a substrate comprising the steps of:

(a) forming an isolated device region of substantially single crystal silicon on a substrate;

(b) providing an impurity of one type conductivity in said device region;

(c) forming two closely spaced regions of opposite conductivity in said device region at exposed surfaces thereof;

(d) forming oxide extension regions over said opposite conductivity regions;

(e) forming opposite conductivity regions on either side of said oxide extension regions and between said regions;

(f) forming a polysilicon layer of said one type conductivity over said opposite conductivity regions and oxide extension regions;

(g) selectively removing said polysilicon layer to leave a gate region extending over and between the oxide extension regions to form a shallow junction adjacent the interface between the gate region and the underlying opposite conductivity region between the oxide extension regions; and

(h) forming source and drain regions of opposite conductivity at either side of the gate region using the oxide extension regions and gate region as a mask.

13. The method of claim 12 wherein the source and drain regions are of n-type conductivity and the gate region of p-type conductivity.

14. The method of claim 12 wherein the source and drain regions are of p-type conductivity and the gate region of n-type conductivity.

15. The method of claim 13 wherein a second integrated junction field-effect device is formed adjacent the device of claim 12 on the same substrate in parallel with the steps of claim 12 and wherein the source and drain regions are of p-type conductivity and the gate region of n-type conductivity.

16. The method of claim 12 wherein the substrate comprises bulk silicon, or silicon-on-insulator.

17. The method of claim 16 wherein the silicon-on-insulator substrate is silicon-on-sapphire.

18. The method of claim 12 wherein the device region is formed by selective oxidation of silicon by masking with an oxide/nitride layer and the impurity of one type conductivity is implanted through opening maid in said oxide/nitride layer.

19. The method of claim 18 wherein the oxide extension regions are formed by selective oxidation of silicon through openings in said oxide/nitride layer.

20. The method of claim 12 wherein the regions formed in step (h) are more heavily doped than the regions formed in step (c) and the regions formed in step (c) are more heavily doped than the regions formed in step (e).

21. The method of claim 12 wherein the regions formed in steps (c) and (d) are asymmetric in lateral width.