Non-crystalline semiconductor solar battery and method of manufacture thereof

• US 4,700,463 A
• Filed: 09/04/1986
• Issued: 10/20/1987
• Est. Priority Date: 09/09/1985
• Status: Expired due to Fees

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Hama, Toshio
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/903,453
• Time in Patent Office: 411 Days
• Field of Search: 136/256, 136/258 AM, 136/290, 357/30, 357/59 C, 29/572, 29/574, 29/575, 29/590
• US Class Current: 438/7
• CPC Class Codes: H01L 31/208 Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 136/29 Testing, calibrating, treating, e.g. aging

Abstract

The invention involves (1) forming a transparent conductive film on an insulating transparent substrate, with the transparent conductive film defining a first electrode, (2) forming a non-crystalline semiconductor film on the transparent conductive film, (3) detecting any pinholes existing in the non-crystalline semiconductor film, (4) applying a laser beam in a reducing atmosphere through the detected pinholes to portions of the transparent conductive film located at portions of the pinholes, such that the portions of the transparent conductive film located at positions at which the pinholes are present are caused to have a high resistance by reduction, and (5) finally forming a metal film on the non-crystalline semiconductor film to define a second electrode.

Claims

1. A method of manufacturing a non-crystalline semiconductor solar battery, comprising:

(a) forming a transparent conductive film on an insulating transparent substrate, said transparent conductive film defining a first electrode;

(b) forming a non-crystalline semiconductor film on said transparent conductive film;

(c) detecting pinholes existing in said non-crystalline semiconductor film;

(d) applying a laser beam in a reducing atmosphere through pinholes detected in step (c) to portions of said transparent conductive film located at positions of said pinholes such that said portions of said transparent conductive film are caused to have a high resistance by reduction, and

(e) forming a metal film on said non-crystalline semiconductor film, said metal film defining a second electrode.

2. The method as in claim 1, wherein said laser beam matches the light absorbance characteristics of said transparent conductive film.

3. The method as in claim 1, wherein step (c) comprises (i) applying monocromatic light to said non-crystalline semiconductor film such that said light passes through said non-crystalline semiconductor film, said transparent conductive film and said insulating transparent substrate, and (ii) measuring the intensity of said light after it has passed through said insulating transparent substrate to detect bright spots in said light.

4. The method as in claim 3, wherein step (c) further comprises employing a photosensor in close contact with a surface of said insulating transparent substrate to detect and measure said light after it has passed through said insulating transparent substrate to generate signals representing said bright spots.

5. The method as in claim 4, wherein step (d) comprises automatically applying said laser beam responsive to said signals generated by said photosensor.

6. The method as in claim 1, wherein said laser beam comprises a long wavelength beam.

7. The method as in claim 1, wherein said laser beam comprises a short wavelength beam.

8. The method as in claim 6, wherein said laser beam is generated by a laser comprising one of a ruby laser, a Nd:

YAG laser, a He-Ne laser, a CO₂ laser, and a GaAlAs laser.

9. The method as in claim 7, wherein said laser beam is generated by a laser comprising one of an He-Cd laser and an N₂ laser.

10. The method as in claim 1, wherein said laser beam is applied in a hydrogen atmosphere.

11. The method as in claim 1, wherein step (c) is performed in an enclosure having a reduced pressure.

12. A method of manufacturing a non-crystalline semiconductor solar battery, comprising:

(a) forming a transparent conductive film on an insulating transparent glass substrate, said transparent conductive film defining a first electrode;

(b) forming a non-crystalline semiconductor film on said transparent conductive film;

(c) detecting pinholes existing in said non-crystalline semiconductive film by (i) applying monochromatic light to said non-crystalline semiconductive film such that said light passes through said non-crystalline semiconductive film, said transparent conductive film, and said insulating transparent substrate, and (ii) employing a photosensor disposed in close contact with a surface of said insulating transparent substrate to detect and measure said light after it has passed through said insulating transparent substrate and to generate signals representing bright spots in said light,

(d) applying a laser beam in a reducing atmosphere comprising hydrogen through pinholes detected in step (c) to portions of said transparent conductive film located at positions of said pinholes such that said portions of said transparent conductive film are caused to have a high resistance by reduction, said laser beam matching the light absorbance characteristics of said transparent conductive film, said laser beam being automatically applied responsive to said signals generated by said photosensor, and

(e) forming a metal film on said non-crystalline semiconductor film, said metal film comprising a second electrode.