ISFET-based measuring device and method for correcting drift

• US 4,701,253 A
• Filed: 10/29/1984
• Issued: 10/20/1987
• Est. Priority Date: 11/03/1983
• Status: Expired due to Fees

• Current Assignee: Sentron V.O.F.
• Original Assignee: Sentron V.O.F.
• Inventors: Ligtenberg, Hendrikus C. G., Leuveld, Jozef G. M.
• Primary Examiner(s): Tung, T.
• Application Number:
  US06/665,808
• Time in Patent Office: 1,086 Days
• Field of Search: 204/401, 204/402, 204/416, 204/418, 204/419, 204/403, 204/406, 204/408, 204/433, 357/25
• US Class Current: 204/416
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

The measuring device (10) comprises an ISFET (12) used as a chemically selective ion sensor, a reference electrode (20) positioned adjacent the ISFET (12), an amplifier (22) coupled to the ISFET and control/correction circuitry (30) coupled to the ISFET (12), to the reference electrode (20) and to the amplifier (22). The control/correction circuitry (30) is operable to maintain the drain-source current I_DS of the ISFET (12) at a constant value and to correct drift effects of the ISFET (12) on the basis of the logarithmic equation:

ΔV.sub.p =A 1n(t/t.sub.o +1 )

where:

ΔV_p =potential drift

A=scale factor for drift and amplitude

t_o =time constant defining the dependence on time

t=time during which the sensor is operative in the event of continuous operation.

Claims

1. A measuring device comprising an ISFET having a drain and a source used as a chemically selective ion sensor, a reference electrode positioned adjacent said ISFET, an amplifier coupled to said ISFET, control circuit means including a clock signal generator coupled to said ISFET, to said reference electrode and to said amplifier:

(a) for timing, with clock signals, time periods of operation of the device;

(b) for maintaining two of the three operating parameters of said ISFET constant while adjusting the third parameter, the parameters being V_DS, I_DS and V_RS, said controlling of the three parameters including;

V_DS constant, I_D S constant, V_RS adjusted; and

V_RS constant, I_DS constant, V_D S adjusted; and

(c) for effecting correction of drift, due to drift effects of said ISFET including adjusting the voltage supplied to the reference electrode relative to changes in potential drift, V_p, on the basis of the logarithmic equation;

space="preserve" listing-type="equation">Δ

Vp=A ln (t/t.sub.o +1)

where;

Δ

V_p =potential drift

A=scale factor for drift and amplitude

t_o =time constant defining the dependence on time

t=time during which the sensor is operative in the event of continuous operation.

2. The device of claim 1 wherein said control circuit means includes a memory component, said memory component being adapted to store the slope of a straight line drawn through a first point and a second point on an experimentally determined curve representing the drift of the device in relation to time, the first point corresponding to a point in time t_a trailing the instant of initial actuation of the device and the second point corresponding to a point in time t_b, where t_b >

t_a, and the measurements to be performed in the interval between t_a and t_b being automatically correctable on the basis of said slope.

3. The device of claim 2, wherein the point of time t_b trails the instant of initial actuation of the device by four hours.

4. The device of claim 1 wherein said control circuit means includes a memory component, said logarithmic equation being stored in said memory component together with values of A and t_o, and said control circuit being operable to correct drift effects on the basis of said stored logarithmic equation and values of A and t_o.

5. The device of claim 1, including means for causing the pulsed excitation of a reference-source potential V_RS of said ISFET and of a drain-source potential V_DS of said ISFET.

6. The device according to claim 1, wherein said ion sensor is a plurality of ISFET sensors which can be successively actuated.

7. The device of claim 1 including an ISFET chip, a protective electrode mounted on said ISFET chip adjacent an ISFET gate region, said protective electrode being electrically connected to the source or the bulk of said ISFET during storage;

and said protective electrode being made of a material which has a minimal potential difference with respect to said reference electrode.

8. The device according to claim 7, including means for directly short-circuiting said protective electrode to said source or bulk during storage of said ISFET.

9. The device according to claim 7, wherein said electrical connection of said protective electrode to said source or bulk includes a Zener diode or an avalanche diode.

10. A method for correcting drift effects of an ISFET in a measuring device comprising an ISFET used as a chemically selective ion sensor, a reference electrode, an amplifier and control circuit means including a clock signal generator for timing, with clock signals, time periods of operation of the device and for maintaining two of three operating parameters of said ISFET constant while adjusting the third parameter, the parameters being V_DS, I_DS and V_RS, said controlling of the three parameters including:

V_DS constant, I_D S constant, V_RS adjusted; and

V_RS constant, I_DS constant, V_DS adjusted;

said method including the steps of;

effecting drift correction due to drift effects of said ISFET including adjusting the voltage supplied to the reference electrode relative to changes in potential drift, V_p, on the basis of the logarithmic equation;

space="preserve" listing-type="equation">Δ

Vp=A ln (t/t.sub.o +1)

where;

Δ

V_p =potential drift

A=scale factor for drift and amplitude

t_o =time constant defining the dependence on time

t=time during which the sensor is operative in the event of continuous operation.

11. The method of claim 10 including the step of storing the slope of a straight line drawn through a first point and a second point on an experimentally determined curve representing the drift of the device in relation to time, the first point corresponding to a point in time t_a trailing the instant of initial actuation of the device and the second point corresponding to a point in time t_b, where t_b <

t_a ;

performing measurements in the interval between t_a and t_b ; and

automatically correcting the drift in said interval on the basis of said slope.

12. The method of claim 10 wherein the point of time t_b trails the instant of initial actuation of the device by four hours.

13. The method of claim 10, including the steps of:

storing the logarithmic equation together with values of A and t_o ; and

correcting drift effects on the basis of the stored logarithmic equation and the values of A and t_o.

14. The method of claim 10, including the step of supplying pulsed excitation for a reference-source potential V_RS of said ISFET and for a drain-source potential V_DS of said ISFET.