Gas-phase growth process
First Claim
1. A gas-phase growth process for forming a film of SiO2, Si3 N4 or Six Oy Nz, which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O2, N2 O, NO2, NO, CO2, CO, NH3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500°
- C. and subjecting the surface of a substrate which is contained in said reaction chamber to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO2, Si3 N4 or Six Oy Nz.
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Abstract
A gas-phase growth process for forming a film of SiO2 Si3 N4 or Six Oy Nz, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O2, N2 O, NO2 NO, CO2 CO and NH3, with the proviso that the mixture of inorganic silane and O2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500° C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
119 Citations
6 Claims
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1. A gas-phase growth process for forming a film of SiO2, Si3 N4 or Six Oy Nz, which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O2, N2 O, NO2, NO, CO2, CO, NH3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500°
- C. and subjecting the surface of a substrate which is contained in said reaction chamber to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO2, Si3 N4 or Six Oy Nz.
- View Dependent Claims (3, 5)
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2. A gas-phase growth process for forming a film of SiO2, Si3 N4 or Six Oy Nz according to the pattern of a mask, which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O2, N2 O, NO2, NO, CO2, CO, NH3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500°
- C. and subjecting the surface of a substrate through a mask with a prescribed pattern, said mask being placed over said substrate, to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO2, Si3 N4 or Six Oy Nz according to the pattern of said mask.
- View Dependent Claims (4, 6)
Specification
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- Resources
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Current AssigneeApplied Materials Japan, Inc. (Applied Materials Incorporated)
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Original AssigneeApplied Materials Japan, Inc. (Applied Materials Incorporated)
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InventorsMaeda, Kazuo, Tokumasu, Noboru, Fukuyama, Toshihiko
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Primary Examiner(s)Newsome, John H.
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Application NumberUS06/778,004Time in Patent Office767 DaysField of Search427/53.1, 427/54.1, 427/82, 427/93, 427/94US Class Current427/583CPC Class CodesC23C 16/308 OxynitridesC23C 16/345 Silicon nitrideC23C 16/401 containing siliconC23C 16/402 Silicon dioxideC23C 16/482 using incoherent light, UV ...C30B 25/02 Epitaxial-layer growth
