Apparatus and methods for resistivity testing

• US 4,703,252 A
• Filed: 02/22/1985
• Issued: 10/27/1987
• Est. Priority Date: 02/22/1985
• Status: Expired due to Term

• Current Assignee: Tencor Instruments (KLA Corporation)
• Original Assignee: Prometrix Corp (KLA Corporation)
• Inventors: Perloff, David S., Mallory, Chester
• Primary Examiner(s): Eisenzopf, Reinhard J.
• Assistant Examiner(s): Burns, William
• Application Number:
  US06/704,296
• Time in Patent Office: 977 Days
• Field of Search: 29/874, 324/62, 324/64, 324/65 P, 324/158 R, 324/158 P, 324/158 F, 324/158 SC
• US Class Current: 324/750.22
• CPC Class Codes: G01R 27/02 Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant by measuring phase angle only G01R25/00

Abstract

An automatic sheet resistance mapping system for semiconductor wafers which has the capability of taking high accuracy, multiple test readings in both contour scan and diameter scan modes. A rotatable wafer stage carries a semiconductor wafer thereon with the center of the wafer positioned substantially at the axis of rotation of the wafer stage. A probe head assembly, including a linear array of at least four equally spaced probe tips projecting from one surface of the assembly is mounted facing the wafer stage on an arrangement for moving the probe tips alternately into and out of contact with the surface of a wafer carried thereon. Positioning arrangements are provided for rotating the wafer stage to accurately registered angular test positions and for producing translation between the wafer stage and the probe head assembly to position the array of probe tips at accurately registered radial test positions relative to the center of the wafer. The positioning arrangements are operable in a diameter scan mode to locate the probe tips at a multiplicity of successive, closely spaced test positions along a diameter line of the wafer and are operative in a contour scan mode to locate the probe tips at a two-dimensional array of different positions across the area of the wafer. The mounting arrangement for the probe head positions the probe head in a prearranged alignment position with the linear array of probe tips oriented at a prearranged small acute angle to a radius line so that the test probe tips each define a track of separated test probe footprints on the wafer in the diameter scan mode.

Claims

1. In an automatic sheet resistance mapping system for semiconductor wafers having a capability of taking multiple test readings in both contour scan and diameter scan modes, in combination:

a rotatable wafer stage for carrying a semiconductor wafer thereon with a center of said wafer positioned substantially at an axis of rotation of said wafer stage;

a probe head assembly including a linear array of at least four equally spaced probe tips projecting from one surface thereof;

mounting means for mounting said probe head assembly with said one surface facing said wafer stage and for moving said array of probe tips alternately into and out of contact with the surface of a wafer carried on said wafer stage;

first positioning means for rotating said wafer stage to accurately registered angular test positions; and

second positioning means for producing translation between said wafer stage and said probe head assembly to position said array of probe tips at accurately registered radial test positions relative to the center of said wafer;

said first and second positioning means being operable in said diameter scan mode to locate said probe tips at a multiplicity of successive closely spaced test positions along a diameter line of said wafer and being operative in said contour scan mode to locate said probe tips at a two-dimensional array of different test positions across an area of said wafer;

said mounting means including means for mounting said probe head in a prearranged alignment position with said linear array of probe tips oriented at a prearranged small acute angle to said diameter line of said wafer as said second positioning means move said probe tips along said diameter line such that said probe tips each define a track of separated test probe footprints on said wafer in said diameter scan mode.

2. The system of claim 1, wherein said probe tips are spaced from each other by about 0.040 inch, and said acute angle of orientation is in a range of about five degrees to fifteen degrees.

3. The system of claim 2, wherein said acute angle to said radius line is about ten degrees.

4. The system of claim 1, wherein said mounting means includes securing means for releasably securing said probe head assembly in a fixed orientation and alignment means for indicating said prearranged alignment position for said probe head assembly.

5. The system of claim 4, wherein said test probe assembly includes a cylindrical body portion and a flange on one end opposite said probe tips, said securing means comprises clamping means for releasably clamping around said cylindrical body portion of said test probe assembly in a fixed orientation, and said alignment means comprises a stop means carried on said clamping means at a registered position and adapted to contact said flange to establish said preselected alignment position of said test probe assembly.

6. In an automatic sheet resistance mapping system for semiconductor wafers having a capability of taking multiple test readings in both contour scan and diameter scan modes, in combination:

a rotatable wafer stage for carrying a semiconductor wafer thereon with a center of said wafer positioned substantially at an axis of rotation of said wafer stage;

a probe head assembly including a linear array of four probe tips projecting from one surface thereof and being equally spaced for each other by a known separation;

mounting means for mounting said probe head assembly with said one surface facing said wafer stage and for moving said array of probe tips alternately into and out of contact with the surface of a wafer carried on said wafer stage;

first positioning means for rotating said wafer stage to accurately registered angular test positions; and

second positioning means for producing translation between said wafer stage and said probe assembly to position said array of probe tips at accurately registered radial test positions relative to the center of said wafer;

said first and second positioning means being operable in said diameter scan mode to locate said probe tips at a multiplicity of successive, closely spaced test positions along a diameter line of said wafer and being operable in said contour scan mode to locate said probe tips at a two-dimensional array of widely spaced test positions distributed across an area of said wafer surface;

said test probe assembly including a cylindrical body portion and flange on one end of said body portion opposite said probe tips;

said mounting means including clamping means for releasably clamping said cylindrical body portion of said test probe assembly in a fixed orientation and a stop means carried on said clamping means at a registered position and adapted to contact said flange of said test probe assembly to establish a preselected alignment position of said probe head assembly such that said linear array of probe tips is oriented at a prearranged small acute angle to said diameter line of said wafer along which said probe head assembly is moved by said second positioning means, said angle having a magnitude selected as a function of said known probe tip separation such that each of said probe tips defines a separate track of test point footprints in said diameter scan mode while maintaining a substantially radial oreintation of said probe tips for improved measurement accuracy at test positions near an edge of said wafer in both said diameter scan mode and sand contour scan mode.

7. The system of claim 6, wherein said probe tips are spaced from each other by about 0.040 inch, and said acute angle to said diameter line is in a range of about five degrees to fifteen degrees.

8. The system of claim 7, wherein said acute angle of orientation is about ten degrees.

9. In a method of performing sheet resistance mapping measurements on a semiconductor wafer in a diameter scan mode, the steps of:

disposing a probe head assembly with a linear array of separated probe tips thereon adjacent a surface of said wafer with said linear array oriented at a prearranged small acute angle of orientation to a radius line of said wafer such that probe tip footprints made by contact with said wafer surface will be separated in a direction orthogonal to said radius line;

translating said probe head assembly relative to said wafer along said radius line to position said probe tips at a multiplicity of closely spaced test point locations while maintaining a constant acute angle of orientation of said probe tip array relative to said radius line; and

contacting said wafer surface with said probe tips at each test point location, thereby producing separate tracks of test probe footprints along said radius line.

10. The method of claim 9, wherein said probe tips are spaced from each other by about 0.040 inch, and said acute angle of orientation is in a range of about five degrees to fifteen degrees.

11. The method of claim 10, wherein said acute angle of orientation is about ten degrees.

12. The method of claim 9 adapted for performing sheet resistance mapping measurements on semiconductor wafers in both a diameter scan mode and a contour scan mode and including the following additional steps in said contour scan mode:

translating said probe head assembly relative to said wafer from edge to center of one of said semiconductor wafers to position said probe tips at a multiplicity of widely spaced radial test locations;

rotating said wafer about its center while said probe tips are at each radial test location to position said probe tips at a multiplicity of widely spaced angular test point locations; and

contacting said wafer surface with said probe tips at each of said angular test point locations, said small acute angle or orientation of said probe tips maintaining said orientation substantially along the diameter line of said wafer and thereby producing better measurement accuracy at test point locations near the edge of said wafer than mapping methods wherein said probe tips are parallel, or perpendicular, to a wafer diameter line.