Method for passivating the back channel of amorphous silicon field effect transistors
First Claim
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1. A method for passivating the back channel region of amorphous silicon field effect transistors, said method comprising the following ordered sequence of process steps:
- sputter etching doped amorphous silicon material at the bottom of a gap in an overlying metal layer;
plasma etching said doped amorphous silicon material and a portion of an underlying amorphous silicon layer;
exposing said amorphous silicon surface to a basic solution; and
depositing a passivating dielectric layer over said field effect transistor.
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Abstract
An organic or inorganic base solution is employed as a means for passivating the back channel region of an amorphous silicon FET device following plasma etching of the back channel region. The passivation provided significantly reduces back channel leakage currents resulting in FET devices which are compatible with conventional processing methods and which exhibit desirable properties for use in liquid crystal display systems.
22 Citations
10 Claims
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1. A method for passivating the back channel region of amorphous silicon field effect transistors, said method comprising the following ordered sequence of process steps:
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sputter etching doped amorphous silicon material at the bottom of a gap in an overlying metal layer; plasma etching said doped amorphous silicon material and a portion of an underlying amorphous silicon layer; exposing said amorphous silicon surface to a basic solution; and depositing a passivating dielectric layer over said field effect transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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