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Method for passivating the back channel of amorphous silicon field effect transistors

  • US 4,704,783 A
  • Filed: 05/05/1986
  • Issued: 11/10/1987
  • Est. Priority Date: 05/05/1986
  • Status: Expired due to Fees
First Claim
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1. A method for passivating the back channel region of amorphous silicon field effect transistors, said method comprising the following ordered sequence of process steps:

  • sputter etching doped amorphous silicon material at the bottom of a gap in an overlying metal layer;

    plasma etching said doped amorphous silicon material and a portion of an underlying amorphous silicon layer;

    exposing said amorphous silicon surface to a basic solution; and

    depositing a passivating dielectric layer over said field effect transistor.

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