Process for making a buried conductor by fusing two wafers

• US 4,704,785 A
• Filed: 08/01/1986
• Issued: 11/10/1987
• Est. Priority Date: 08/01/1986
• Status: Expired due to Fees

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Curran, Patrick A.
• Primary Examiner(s): Ozaki, George T.
• Application Number:
  US06/893,437
• Time in Patent Office: 466 Days
• Field of Search: 29/576 J, 29/582, 29/591, 148/175, 148/187
• US Class Current: 438/455
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/74 Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/7378 comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Abstract

A process, and product made thereby, for bonding two wafers together to form a single wafer with a continuous interface, and for selectively burying a low impedance conductor in the wafer, by providing host and guest wafers having substantially the same crystal orientation and periodicity. A crystalline boundary n-semimetal is formed on the wafers, which are then brought into intimate contact. If desired, a unipolar conductor is fused to one of said wafers. Then, the wafers are exposed to an elevated temperature, or rapid thermal anneal, in an inert ambient, breaking up any native oxides and diffusing any excess oxygen into the wafer lattices. The guest wafer is then mechanically lapped back and chemically etched.

A vertical cascode integrated half H-bridge motor driving circuit made in the guest and host wafers has a source transistor in the host wafer with with the wafer substrate forming the collector of the transistor, an isotype acceptor doped Ge_x Si_l-x /Si superlattice forming the base, and an overlying a monocrystalline silicon layer forming a compositional emitter, and with an n-semimetal boundary. The sink transistor of the guest is made with the wafer substrate forming the emitter, an isotype acceptor doped Ge_x Si_l-x /Si superlattice forming the base, and an overlying a monocrystalline silicon layer forming the compositional collector. The guest substrate is terminated with an n-semimetal boundary. A buried conductor contacts the collector of the host transistor and the emitter of the guest transistor.

Claims

1. A process for making a buried low impedance conductor in a crystalline lattice substrate, comprising:

providing a host wafer;

providing a guest wafer having a crystal orientation substantially the same as that of the host wafer;

fusing at least one unipolar conductor layer to one of said wafers; and

bringing the host and guest wafers into intimate contact at an elevated temperature in an inert ambient with said unipolar conductor therebetween, whereby native oxides are broken up and any excess oxygen is diffused into the host and guest lattices leaving exposed bond orbitals.

2. The process of claim 1 further comprising providing wafers having nearly identical periodicity for said host and guest wafers.

3. The process of claim 1 wherein said elevated temperature is created by rapid thermal annealing.

4. The process of claim 3 wherein said rapid thermal annealing is a halogen lamp anneal.

5. The process of claim 4 wherein said anneal is performed at a temperature of about 1000°

C. for a time of about 60 seconds.

6. The process of claim 1 further comprising depositing a crystalline boundary n-semimetal on the guest and host wafers followed by depositing a layer of crystalline silicide thereon.

7. The process of claim 1 further comprising mechanically lapping back the guest portion of the fused wafer after fusion and then chemically etching the structure.

8. The process of claim 7 wherein said step of chemically etching the structure comprises etching using an anisotropic silicon etchant.

9. The process of claim 8 wherein said step of using an anisotropic silicon etchant comprises using propanol diluted potassium hydroxide at a temperature of about 85°

C.