Carbon film oxidation for free-standing film formation

• US 4,705,659 A
• Filed: 07/07/1986
• Issued: 11/10/1987
• Est. Priority Date: 04/01/1985
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Chanley, Charles S., Bernstein, Jonathan J., Koger, T. Bruce
• Primary Examiner(s): Thurlow, Jeffery
• Application Number:
  US06/882,864
• Time in Patent Office: 491 Days
• Field of Search: 264/29.6, 264/81-83, 264/80, 264/61, 264/104, 264/221, 264/105, 264/317, 264/332, 264/338, 264/139, 156/659.1, 156/664, 156/666
• US Class Current: 264/29.6
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: H01L 31/03682 including only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells

Abstract

A process is disclosed for fabricating a free-standing thin or thick film structure. One embodiment of the process includes the steps of providing a substrate of a first refractory material, forming a layer of carbon on the substrate, and depositing a film of a second refractory material on top of the layer of carbon. This sandwich structure is heated in an oxidizing ambient to cause the oxidation of the carbon layer leaving the second refractory material as a free-standing film.

Claims

1. A process for fabricating a free-standing sheet of silicon which comprises the steps of:

providing a refractory substrate having a surface;

forming a pyrolytic carbon layer overlying said surface by heating said surface and decomposing a hydrocarbon thereon;

depositing a layer of silicon overlying said carbon layer;

providing an edge at which said carbon layer is exposed; and

separating said layer of silicon from said substrate by heating in an oxygen ambient to oxidize said carbon layer from beneath said layer of silicon.

2. The process of claim 1 wherein said refractory substrate comprises a material selected from the group consisting of silicon, quartz, molybdenum, silicon carbide, mullite, silicon nitride, and aluminum oxide.

3. The process of claim 2 wherein said refractory substrate comprises silicon.

4. The process of claim 2 wherein said hydrocarbon comprises an alcohol.

5. The process of claim 4 wherein said alcohol comprises isopropyl alcohol.

6. The process of claim 1 wherein said step of providing an edge comprises masking a portion of said substrate from the deposition of silicon.

7. The process of claim 1 wherein said step of heating comprises heating to a temperature of about 850°

-1200°

C. for a time to oxidize all of said carbon layer.

8. The process of claim 1 further comprising the step of:

patterning said layer of carbon before depositing said layer of silicon.

9. The process of claim 1 further comprising the step of patterning said layer of silicon.

10. The process of claim 1 wherein said step of forming a pyrolytic carbon layer comprises forming a layer of photoresist on said substrate and pyrolyzing said photoresist.

11. A process for fabricating a free-standing sheet of refractory material which comprises the steps of:

providing a substrate of a first refractory material;

forming a layer of barrier material overlying said first refractory material;

forming a pyrolytic carbon layer overlying said layer of barrier material;

depositing a layer of a second refractory material overlying said pyrolytic carbon layer;

providing an edge at which said carbon layer is exposed; and

separating said layer of a second refractory material from the underlying layer by heating in an oxidizing ambient to oxidize said carbon layer.

12. The process of claim 11 further comprising the step of forming a layer of a second barrier material between said pyrolytic carbon layer and said layer of a second refractory material.

13. The procees of claim 12 wherein said layer of barrier material and said layer of a second barrier material comprise the same material.

14. The process of claim 11 wherein said layer of barrier material comprises silicon nitride or silicon dioxide.

15. The proces of claim 11 wherein said second refractory material comprises silicon.

16. The process of claim 11 wherein said substrate comprises a shaped surface.

17. A process for fabricating a free-standing sheet of refractory material which comprises the steps of:

providing a substrate of a first refractory material;

forming a pyrolytic carbon layer overlying said substrate;

forming a layer of a barrier material overlying said pyrolytic carbon layer;

depositing a layer of a second refractory material overlying said layer of a barrier material;

providing an edge at which said carbon layer is exposed; and

separating said layer of a second refractory material from the underlying layer by heating in an oxidizing ambient to oxidize said carbon layer.