Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof

• US 4,706,041 A
• Filed: 05/28/1986
• Issued: 11/10/1987
• Est. Priority Date: 03/21/1986
• Status: Expired due to Fees

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Texas Instruments, Inc.
• Inventors: Bayraktaroglu, Burhan
• Primary Examiner(s): Grimm, Siegfried H.
• Application Number:
  US06/868,212
• Time in Patent Office: 531 Days
• Field of Search: 331/52, 331/56, 331/96, 331/99, 331/107 DP, 331/107 P, 331/107 SL, 331/117 D, 331/177 V, 330/286, 330/287, 330/53, 330/54, 333/219, 333/220, 333/238, 333/247, 333/250, 333/236, 357/13, 357/14, 357/16, 357/40, 357/45, 357/51, 357/57, 357/49
• US Class Current: 331/52
• CPC Class Codes: H03B 9/143 using more than one solid state device
• CPC Class Codes: Y10S 257/926 Elongated lead extending axially through another elongated lead

Abstract

Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the periodic diode structures as the gain element of microwave amplifiers and oscillators. Preferred embodiments also place capacitors between the diodes to fix nodes in the electric field and increase the effective structure size.

Claims

1. A monolithic microwave device, comprising:

(a) a transmission line segment consisting of a first conductor separated from a second conductor by solid dielectric; and

(b) a plurality of negative resistance devices in said dielectric located in groups periodically along said segment and connected to said first conductor and formed on said second conductor.

2. The device of claim 1, wherein:

(a) said first conductor is a microstrip; and

(b) said second conductor is a heat sink.

3. The device of claim 2, wherein:

(a) said negative resistance devices are diodes abutting said heat sink.

4. The device of claim 1, further comprising:

(a) a plurality of capacitors located periodically along said segment between said groups of negative resistance devices and connected from said first conductor to said second conductor.

5. The device of claim 2. further comprising:

(a) a plurality of capacitors located periodically along said segment between said groups of negative resistance devices and connected from said microstrip to said heat sink.

6. The device of claim 1, wherein:

(a) there are two of said groups.

7. The device of claim 1, wherein:

(a) each of said groups of negative resistance devices is a single negative resistance device.

8. The device of claim 1, wherein:

(a) each of said groups of negative resistance devices is a pair of negative resistance devices.

9. The device of claim 1, wherein:

(a) said negative resistance devices have a capacitance per unit length along said transmission line segment that is less than the capacitance per unit length of said transmission line.

10. The device of claim 1, wherein:

(a) said dielectric is polyimide.

11. The device of claim 2, wherein:

(a) said dielectric is polyimide and of thickness greater than the thickness at which the transmission line conductor losses equal the magnitude of the device negative resistances.

12. The device of claim 2, wherein:

(a) said dielectric is polyimide and of thickness in the range of 10 to 20 μ

m.

13. A monolithic microwave oscillator, comprising:

(a) a transmission line segment consisting of a first conductor separated from a second conductor by solid dielectric;

(b) a first group of negative resistance devices in said dielectric located near a first end of said segment;

(c) a second group of negative resistance devices in said dielectric located near the end of said segment remote from said first end;

(d) and each of said negative resistance devices connected to said first conductor and formed on said second conductor; and

(e) an output connected to said first end.

14. The oscillator of claim 13, further comprising:

(a) a varactor coupled to said segment at said remote end.

15. The oscillator of claim 14, wherein:

(a) said varactor is an IMPATT diode biased below breakdown;

(b) said varactor is coupled to said segment by a capacitor; and

(c) said output is capacitively coupled to said first end.

16. The oscillator of claim 13, further comprising:

(a) at least one further group of negative resistance devices located along said segment making all of said groups approximately equispaced along said segment;

(b) said further negative resistance devices also connected from said first conductor to said second conductor.

17. The oscillator of claim 16, further comprising:

(a) a plurality of capacitors connected from said first conductor to said second conductor;

(b) said capacitors located along said segment approximately at the midpoints between adjacent ones of said groups of negative resistance devices.

18. The oscillator of claim 13, further comprising:

(a) a d-c bias line for said negative resistance devices and connected to approximately the midpoint of said first conductor.

19. The oscillator of claim 13, wherein:

(a) said first conductor is a microstrip;

(b) said second conductor is a heat sink; and

(c) said negative resistance devices are diodes.

20. A monolithic microwave device, comprising:

(a) a transmission line segment consisting of a first conductor separated from a second conductor by solid dielectric;

(b) a first group of negative resistance devices in said dielectric located near a first end of said segment;

(c) a second group of negative resistance devices in said dielectric located near the end of said segment remote from said first end;

(d) each of said negative resistance devices connected to said first conductor and formed on said second conductor;

(e) a circulator with a first port connected to said first end;

(f) an input connected to a second port of said circulator; and

(g) an output connected to a third port of said circulator.

21. The device of claim 20, wherein:

(a) said first conductor is a microstrip;

(b) said second conductor is a heat sink; and

(c) said negative resistance devices are diodes abutting said heat sink.

22. A monolithic microwave two-port amplifier, comprising:

(a) a transmission line segment consisting of a first conductor separated from a second conductor by solid dielectric;

(b) a plurality of negative resistance devices in said dielectric located in groups periodically along said segment and connected to said first conductor and formed on said second conductor;

(c) an input connected to a first end of said segment; and

(d) an output connected to the end of said segment remote from said first end.

23. The device of claim 22, wherein:

(a) said first conductor is a microstrip;

(b) said second conductor is a heat sink;

(c) said negative resistance devices are diodes abutting said heat sink; and

(d) each of said groups is a single diode.