×

Semiconductor gas sensor having thermally isolated site

  • US 4,706,493 A
  • Filed: 12/13/1985
  • Issued: 11/17/1987
  • Est. Priority Date: 12/13/1985
  • Status: Expired due to Fees
First Claim
Patent Images

1. A gas sensor device for detecting a species in an ambient gas and having a localized, thermally isolated gas interaction site, said device comprisinga silicon substrate including a film support region at said gas interaction site and a region adjacent the film support region, said substrate being etchedly recessed opposite the gas interaction site such that the thickness of the film support region is substantially reduced relative to the adjacent region,an electrically insulative coating overlying the substrate film support region,a gas sensitive semiconductor thin film supported upon the insulative coating at said gas interaction site and situated for exposure to ambient gas, andmeans at the gas interaction site for selectively heating the gas sensitive thin film to a temperature operative for detecting the species, whereby heat flow from the gas interaction site through the substrate is substantially reduced as a result of the reduced thickness of the substrate film support region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×