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Lithographic image size reduction

  • US 4,707,218 A
  • Filed: 10/28/1986
  • Issued: 11/17/1987
  • Est. Priority Date: 10/28/1986
  • Status: Expired due to Term
First Claim
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1. Process for forming a mask having an opening of a size smaller than obtainable by lithography, comprising:

  • providing a substrate coated with a photosensitive material;

    patterning the photosensitive material to form an opening therein, said opening having substantially vertical walls and minimum size dictated by resolution limit of lithography;

    forming a conformal layer of a material on the resulting structure including said vertical walls; and

    anisotropically etching said conformal layer to provide said conformal layer material on said vertical walls whereby said size of said opening is reduced.

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