Temperature compensation for a semiconductor light source used for exposure of light sensitive material

• US 4,710,631 A
• Filed: 08/27/1985
• Issued: 12/01/1987
• Est. Priority Date: 08/28/1984
• Status: Expired due to Term

• Current Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Takahashi, Koji, Konishi, Masahiro, Aotsuka, Yasuo
• Primary Examiner(s): Howell, Janice A.
• Assistant Examiner(s): Hannaher, Constantine
• Application Number:
  US06/769,915
• Time in Patent Office: 826 Days
• Field of Search: 372/29, 372/34, 369/106, 369/116, 365/215, 250/205, 250/354.1
• US Class Current: 250/354.1
• CPC Class Codes: G03C 5/164 Infrared processes
• CPC Class Codes: H01S 5/0612 controlled by temperature
• CPC Class Codes: H01S 5/0617 using memorised or pre-programmed laser characteristics
• CPC Class Codes: H01S 5/068 Stabilisation of laser output parameters H01S5/0625 takes precedence

Abstract

An image forming method for exposing a light-sensitive material with a semiconductor light source whereby temperature-dependent variations in the radiation intensity and spectral characteristics of the light source are fully compensated for so as to maintain constant exposure conditions. For this purpose, correction coefficients for ambient temperature dependent variations in the radiation intensity and spectral characteristics of the semiconductor light source are stored in a memory as tabulated data. In response to the measured ambient temperature, a correction coefficient is read from the memory and applied to compensate for any variations in the radiation intensity and spectral characteristics of the semiconductor light source. Also, the correction can be effected in accordance with the measured temperature of the light source, that measurement being performed by detecting a change in the forward bias supplied to the semiconductor light source.

Claims

1. In an image forming method wherein a light-sensitive material having spectral sensitivity characteristics with a peak value is exposed under a semiconductor light source, the improvement comprising:

rendering a center wavelength of variations in peak spectral radiation due to variation of temperature from said light source substantially equal to a wavelength for peak spectral sensitivity of said light-sensitive material, and compensating any temperature-dependent variations in said radiation intensity of said light source.

2. The image forming method according to claim 1, wherein said radiation intensity of said light source is corrected in response to a signal of ambient temperature as measured by a temperature sensor.

3. An image forming method according to claim 1, wherein the step of compensating any temperature-dependent variations in said radiation intensity of said semiconductor light source comprises:

detecting temperature variations of a temperature of said light source by measurement of change in a forward bias applied to said light source; and

compensating for any variation in said temperature of said light source in response to thus-detected temperature variations.