Heat sink structure

• US 4,712,609 A
• Filed: 02/07/1985
• Issued: 12/15/1987
• Est. Priority Date: 11/21/1984
• Status: Expired due to Fees

• Current Assignee: Arthur H. Iversen
• Original Assignee: Arthur H. Iversen
• Inventors: Iversen, Arthur H.
• Primary Examiner(s): Davis, Jr., Albert W.
• Assistant Examiner(s): Neils, Peggy
• Application Number:
  US06/699,429
• Time in Patent Office: 1,041 Days
• Field of Search: 165/80 C, 165/133, 165/80.3, 165/80.4, 357/68, 357/74, 357/80, 357/82, 361/385, 361/401
• US Class Current: 165/80.4
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01S 3/0407 Liquid cooling, e.g. by water
• CPC Class Codes: H01S 5/02423 Liquid cooling, e.g. a liquid cools a mount of the laser

Abstract

There is disclosed a novel high heat flux liquid cooled semi-conductor heat sink structure suitable for mounting semi-conductor chips such as IC'"'"'s, hybrids, lasers, and power semi-conductors, said heat sink being made of metals, such as tungsten or Molybdenum; ceramics such as alumina, Beryllia, aluminum nitride, silicon carbide or variants thereof or other suitable material such as crystalline carbon, said semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor chips in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes: means disposed on said heat exchange surface for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the anode heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said anode heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles.

Claims

1. A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes:

means, disposed on said heat exchange surface for providing coolant liquid flow over substantially the entirety of said surface and for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles.

2. The semi-conductor heat sink structure of claim 1, further comprising:

means disposed on said heat exchange surface, for forming nucleate bubbles of predetermined size and distribution to thereby increase heat flux.

9. In the apparatus of claim 1 the improvement wherein said means for generating pressure gradients comprises said heat exchange surface and said heat exchange surface comprises a contoured surface having a predetermined periodic geometry.

16. In the apparatus of claim 2, the further improvement wherein said means comprises cavities and said cavities have dimensions in the range of 0.002 mm to 0.2 mm, and said cavities being spaced apart on said heat exchange surface said spacing generally ranging from 0.03 mm to 3 mm whereby more efficient heat transfer is obtained.

17. In apparatus of claim 2 the further improvement wherein said heat exchange surface has intimately adherent thereto a thin porous metal layer.

18. In the apparatus of claim 17 the further improvement wherein said porous metal is of relatively uniform pore size.

3. A semi-conductor heat sink structure including a planar external surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, the improvement wherein said heat exchange surface includes:

means wherein the interior surface of said heat sink structure contains one or more adjacent periodic curves across substantially the width of said structure and extending substantially the length of said structure and wherein a liquid coolant diverter is structured in close proximity to said heat exchange surface to provide predetermined liquid flow conditions at said heat exchange surface.

10. In the apparatus of claim 3 the further improvement wherein each said period of curve is provided with ducting for the alternate injection and removal of said coolant.

4. A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes means disposed on said heat exchange surface, for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the anode heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said anode heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles, the improvement wherein said surface for bonding semi-conductor devices includes:

channels of predetermined depth and width adjacent to at least two opposite sides of said semi-conductor device.

7. In the apparatus of claim 4 the further improvement wherein said heat exchange surface is prepared with means disposed on said heat exchange surface, for forming nucleate bubbles of predetermined size and distribution to thereby increase heat flux.

5. A semi-conductor heat sink structure including at least one surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes means, disposed on said heat exchange surface for forming pressure gradients in said liquid having a component perpendicular to said heat exchange surface without substantially impeding the relative velocity between the heat exchange surface and said liquid, said component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said liquid, to facilitate removal of said nucleate bubbles, the improvement wherein said surface for bonding semi-conductor devices includes:

channels of predetermined depth and width adjacent to at least two opposite sides of said semi-conductor device and underlying, to a pre-determined distance, said semi-conductor device wherein a semi-conductor device removal tool may be inserted for the removal of said semi-conductor device.

6. A semi-conductor heat sink structure including a planar surface suitable for bonding one or more semi-conductor devices in intimate thermal relationship thereto, and including a heat exchange surface on the interior surface thereof, said structure providing means for enclosing said heat exchange surface in a liquid tight manner and including means for providing a flow of coolant liquid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles on said heat exchange surface, said heat exchange surface further includes one or more adjacent periodic curves across substantially the width of said structure and extending substantially the length of said structure and wherein a liquid coolant diverter is structured in the heat exchange region to provide predetermined liquid flow conditions in the proximity of said heat exchange surface, the improvement wherein said surface for bonding semi-conductor devices includes:

channels of predetermined depth and width adjacent to at least two sides of said semi-conductor device and underlying, to a pre-determined distance, said semi-conductor device wherein a semi-conductor device removal tool may be inserted to provide a force for the removal of said semi-conductor device.

8. In the apparatus of claim 6 the further improvement wherein said heat exchange surface is prepared with means disposed on said heat exchange surface, or forming nucleate bubbles of predetermined size and distribution to thereby increase heat flux.

11. In the apparatus of claim 6 the further improvement wherein each said period or curve is provided with ducting for the alternate injection and removal of said coolant.

12. In the apparatus of claim 11 the further improvement wherein said predetermined periodic curves comprises flutes with flattened cusps.

13. In the apparatus of claim 6, the further improvement wherein said periodic curves are segments of circular arcs.

14. In the apparatus of claim 6 the further improvement wherein said liquid coolant comprises a dielectric composition.

15. In the apparatus of claim 6, the improvement wherein means are provided at the juncture of said periodic curves to join upper and lower internal surfaces of said structure whereby rigidity is provided to said structure.

19. In the apparatus of claim 6 the further improvement wherein said substrate surface is made from a metal selected from the group consisting of tungsten, molybdenum or zirconium, or crystalline carbon or variants thereof.

20. In the apparatus of claim 6 the further improvement wherein said substrate surface is made from a ceramic selected from the group consisting of silicon carbide, alumina, beryllia, aluminum nitride or variants thereof.

21. In the apparatus of claim 6, wherein a viscous sublayer exists proximate said heat exchange surface, the further improvement wherein said heat exchange surface is further prepared with roughness said roughness having heights ranging from 0.0001" to 0.008" above said heat exchange surface whereby the viscous sublayer may be broken up.

22. In the apparatus of claim 6 the further improvement wherein said semi-conductor chip is bonded to an intermediate substrate of specified expansion and thermal transfer characteristics, provided with leads and encapsulated and the resulting packaged semi-conductor device then bonded in a thermally intimate manner to said semi-conductor heat sink structure thereby providing high heat transfer and simplifying removal and replacement of defective devices.

23. In the apparatus of claim 6 the further improvement wherein said channels have the wall, underlying and adjacent said semi-conductor device, shaped wherein said device removal tool may be precisely and advantageously positioned.

24. In the apparatus of claim 23 said shape of wall comprises a bevel.

25. In the apparatus of claim 6 the further improvement wherein said heat exchange surface is prepared with cavities said cavities have dimensions in the range of 0.002 mm to 0.2 mm, and said cavities being spaced apart on said heat exchange surface said spacing generally ranging from 0.03 mm to 3 mm whereby more efficient heat transfer is obtained.

26. In the apparatus of claim 6, the further improvement wherein said liquid coolant comprises a non-dielectric composition.

27. In the apparatus of claim 14, wherein said dielectric composition is a fluorocarbon refrigerant.

28. In the apparatus of claim 26, wherein said non-dielectric composition is water.

29. In the apparatus of claim 25, wherein a viscous sublayer of laminar flow tends to form immediately adjacent said heat exchange surface bounded superiorly by a transition zone to turbulent flow of said liquid, the further improvement wherein said cavities comprise truncated cones whose bases are affixed to the heat exchange surface, said cones containing approximately centered cavities which are exposed to the liquid, the cone height being not less than 0.3 times the height of the viscous sublayer nor more than twice the combined height of the viscous sublayer and the transition zone.

30. In the apparatus of claim 25, the further improvement whereby the inside surface of said cavities is prepared with micro cavities, the dimensions of said micro cavities being in the range of from about 1×

10^-4 mm to 1×

10^-2 mm.

31. In a heat sink for structurally supporting at least a portion of a heat generating device in intimate thermal relationship therewith and for removing heat flux from the region of thermal contact therebetween at or about a heat exchange surface, said heat sink providing a heat exchange fluid environment proximate said heat exchange surface and including flow means for providing a current of coolant fluid to remove heat from said heat exchange surface by formation of nucleate vapor bubbles thereon, the improvement comprising fluid pressure developing means disposed on said heat exchange surface for forming pressure gradients in said coolant fluid having a pressure component generally perpendicular to said surface while maintaining generally constant the relative flow velocity of fluid relative to said surface, said pressure component having a magnitude directly proportional to the square of the relative velocity between said heat exchange surface and said fluid, to facilitate removal of said nucleate bubbles, and further wherein coolant flows over substantially the entirety of said heat exchange surface.