Homogeneous photoconductive layer of amorphous silicon and hydrogen

• US 4,713,311 A
• Filed: 12/07/1983
• Issued: 12/15/1987
• Est. Priority Date: 12/09/1982
• Status: Expired due to Fees

• Current Assignee: Licentia Patent-Verwaltungs-GmbH (AB Electrolux)
• Original Assignee: Licentia Patent-Verwaltungs-GmbH (AB Electrolux)
• Inventors: Senske, Wilhelm, Greeb, Karl-Heinrich, Marschall, Norbert, Herkert, Roland
• Primary Examiner(s): Goodrow, John L.
• Application Number:
  US06/559,178
• Time in Patent Office: 1,469 Days
• Field of Search: 430/65, 430/66, 430/84, 430/95, 430/127, 430/130
• US Class Current: 430/127
• CPC Class Codes: G03G 5/08221 comprising one or two silicon based layers

Abstract

The present invention relates to an electrophotographic recording material and to a process for manufacturing it. The material comprises an electrically conductive substrate and a photoconductive layer of amorphous silicon and hydrogen applied thereto. The recording material is characterized by only a single photoconductive layer having an oxygen component of about 1 ppm to 1 atom percent. The recording material is produced by means of cathode sputtering.

Claims

1. A process for producing an electrophotographic recording material having an electrically conductive substrate and an homogeneous photoconductive layer of amorphous silicon and hydrogen applied thereon, said process comprising

precipitating a photoconductive layer of silicon onto a substrate maintained at a temperature ranging from 100°

to 300°

C. by cathode sputtering in an atmosphere consisting of oxygen or an oxygen-releasing gas, hydrogen and argon, wherein the oxygen or oxygen-releasing gas is present in a proportion of about 1 ppm to 1 vol.% to said hydrogen and said argon gases.

2. The process of claim 1, further comprising

precipitating a structure-determining layer of silicon on the substrate prior to depositing the photoconductive layer, said structure-determining layer having a thickness of about 0.1 nm to 100 nm and being deposited in an atmosphere containing hydrogen, argon and oxygen gases, said oxygen gas being added to said hydrogen and said argon gases in an amount of about 1 ppm to 50 vol.%.

3. The process of claim 1, further comprising

precipitating a structure-determining layer of silicon on the substrate prior to depositing the photoconductive layer, said structure-determining layer having a thickness of about 0.1 nm to 100 nm and being deposited in an atmosphere containing hydrogen, argon and a carbon- or nitrogen-releasing gas, said carbon- or nitrogen-releasing gas being added to said hydrogen and said argon gases in a proportion of about 0.1 ppm to 50 vol.%.

4. The process of claim 1, wherein

the proportion of said oxygen gas in the atmosphere is maintained constant throughout the process.

5. The process of claim 1, wherein

said silicon layer contains oxygen atoms which are homogeneously distributed throughout the thickness of the silicon layer.

6. The process of claim 1, wherein

said silicon layer is the sole photoconductive layer of the electrophotographic recording material.

7. The process of claim 1, wherein said silicon is amorphous silicon.