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Homogeneous photoconductive layer of amorphous silicon and hydrogen

  • US 4,713,311 A
  • Filed: 12/07/1983
  • Issued: 12/15/1987
  • Est. Priority Date: 12/09/1982
  • Status: Expired due to Fees
First Claim
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1. A process for producing an electrophotographic recording material having an electrically conductive substrate and an homogeneous photoconductive layer of amorphous silicon and hydrogen applied thereon, said process comprisingprecipitating a photoconductive layer of silicon onto a substrate maintained at a temperature ranging from 100°

  • to 300°

    C. by cathode sputtering in an atmosphere consisting of oxygen or an oxygen-releasing gas, hydrogen and argon, wherein the oxygen or oxygen-releasing gas is present in a proportion of about 1 ppm to 1 vol.% to said hydrogen and said argon gases.

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