Ion source

• US 4,713,585 A
• Filed: 09/26/1986
• Issued: 12/15/1987
• Est. Priority Date: 09/30/1985
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Sato, Tadashi, Kurosawa, Yukio, Hakamata, Yoshimi, Ohno, Yasunori, Kurosawa, Tomoe
• Primary Examiner(s): Dixon, Harold
• Application Number:
  US06/911,790
• Time in Patent Office: 445 Days
• Field of Search: 313/359.1, 313/360.1, 250/423, 250/492.3, 315/111.81, 315/111.71, 315/111.21, 315/111.31, 315/111.41
• US Class Current: 315/111.81
• CPC Class Codes: H01J 27/14 Other arc discharge ion sources using an applied magnetic field
• CPC Class Codes: H01J 27/18 with an applied axial magnetic field
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns

Abstract

An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber equipped with first magnetic means for limiting a plasma region and a plasma expansion chamber provided in combination with the plasma producing chamber on the side where a beam extracting electrode is disposed. The plasma expansion chamber is provided with second magnet array for confining and holding a plasma region therein which is of a larger area than that of the plasma region formed in the plasma producing chamber.

Claims

1. An ion source, comprising a plasma producing chamber supplied with a gas for producing a plasma through high-frequency electric discharge, first magnetic means provided within said plasma producing chamber for limiting a plasma region defined within said plasma producing chamber, beam extracting means for extracting an ion beam from said plasma producing chamber, a plasma expansion chamber provided in such a manner that said plasma producing chamber is across the plasma expansion chamber from said beam extracting means, and second magnetic means for confining and holding a plasma region having an area larger than that of the plasma region formed within said plasma producing chamber.

2. An ion source according to claim 1, wherein said high-frequency electric discharge is produced by supplying a high-frequency power to a high frequency coil installed within said plasma producing chamber outside of said plasma region.

3. An ion source according to claim 1, wherein the ion source comprises a plurality of said plasma producing chambers, each of which is provided with said plasma expansion chamber.

4. An ion source according to claim 3, wherein said high-frequency electric discharge is produced by supplying a high-frequency power to a high frequency coil installed within said plasma producing chamber outside of said plasma region.

5. An ion source according to claim 3, wherein a vacuum container is disposed below each of said plasma expansion chambers, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.

6. An ion source according to claim 1, wherein the ion source further comprises a vacuum container disposed below said plasma expansion chamber, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.

7. An ion source according to claim 6, wherein the ion source comprises a plurality of said plasma producing chambers, each of which is provided with said plasma expansion chamber.

8. An ion source according to claim 7, wherein a vacuum container is disposed below each of said plasma expansion chambers, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.

9. An ion source comprising a plasma producing chamber supplied with a gas for producing a plasma through microwave electric discharge, first magnetic means provided in combination with said plasma producing chamber for limiting a plasma region defined within said plasma producing chamber, beam extracting means for extracting an ion beam from said plasma producing chamber, a plasma expansion chamber provided in such a manner that said plasma producing chamber is across the plasma expansion chamber from said beam extracting means, and second magnetic means for confining and holding a plasma region having an area larger than that of the plasma region formed within said plasma producing chamber.

10. An ion source according to claim 9, wherein the ion source further comprises a vacuum container disposed below said plasma expansion chamber, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.