Electrostatic discharge protection using thin nickel fuse

• US 4,714,949 A
• Filed: 09/12/1986
• Issued: 12/22/1987
• Est. Priority Date: 09/28/1984
• Status: Expired due to Fees

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Texas Instruments, Inc.
• Inventors: Walsh, Shawn T., Roberts, Charles G., Simmons, Arturo
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US06/907,130
• Time in Patent Office: 466 Days
• Field of Search: 357/30, 357/51, 357/62, 357/45, 357/23.13
• US Class Current: 257/355
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The disclosure relates to a system for protecting HgCdTe and the like MIS arrays from breakdown during fabrication due to electrostatic charge buildup on the array capacitors. This is accomplished by building into the structure a short circuit across the capacitor plates with a fuse region therein that will evaporate when a voltage is placed thereacross which is sufficient to cause evaporation and low enough not to damage the capacitors.

Claims

1. A MIS array semiconductor device in which each device comprises:

(a) a semiconductor substrate,

(b) a first insulating layer on said substrate, and

(c) an electrically conductive layer on said insulating layer, said conductive layer being patterned into an MIS element, said element including a gate and a fuse, said first insulating layer forming the gate insulator and defining a first via therethrough associated with said MIS element, said fuse being a narrow portion of said conductive layer connected at one end to said gate and connected at the other end to said substrate through said first via, said gate connected to a bond pad, said narrow portion of width being sufficiently thin to blow the fuse with a voltage applied to said gate relative to said substrate that is below the minimum voltage required to damage said insulating layer or substantially move fixed charge in said insulating layer,

(d) whereby said fuse short circuits the MIS capacitor formed by said gate with said substrate until said fuse is blown.

2. A semiconductor device as set forth in claim 1 wherein gate region has a cross-sectional area at least about ten times the cross-sectional area of said fuse region.

3. A semiconductor device as set forth in claim 1 further including a second insulating layer disposed over said conductive layer and defining a second via therethrough associated with each MIS element and a bond pad on said second insulating layer electrically coupled to said gate region.

4. A semiconductor device as set forth in claim 2 further including a second insulating layer disposed over said conductive layer and defining a second via therethrough associated with each MIS element and a bond pad on said second insulating layer electrically coupled to said gate region.

5. A semiconductor device as set forth in claim 1 wherein said substrate is HgCdTe, said first insulating layer is ZnS and said electrically conductive layer is taken from the class consisting of Ni, Al and Ni selectively coated with Al.

6. A semiconductor device as set forth in claim 2 wherein said substrate is HgCdTe, said first insulating layer is ZnS and said electrically conductive layer is taken from the class consisting of Ni, Al and Ni selectively coated with Al.

7. A semiconductor device as set forth in claim 3 wherein said substrate is HgCdTe, said first insulating layer is ZnS and said electrically conductive layer is taken from the class consisting of Ni, Al and Ni selectively coated with Al.

8. A semiconductor device as set forth in claim 4 wherein said substrate is HgCdTe, said first insulating layer is ZnS and said electrically conductive layer is taken from the class consisting of Ni, Al and Ni selectively coated with Al.

9. A semiconductor device as set forth in claim 7 wherein said second insulating layer is formed of ZnS and said bond pad is formed in indium.

10. A semiconductor device as set forth in claim 8 wherein said second insulating layer is formed of ZnS and said bond pad is formed of indium.

11. A semiconductor device as set forth in claim 3 wherein a layer of Al is disposed at the interior end of said second via.

12. A semiconductor device as set forth in claim 4 wherein a layer of Al is disposed at the interior end of said second via.