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Method of detecting the endpoint of the etch of epitaxially grown silicon

  • US 4,717,446 A
  • Filed: 09/18/1986
  • Issued: 01/05/1988
  • Est. Priority Date: 09/18/1986
  • Status: Expired due to Fees
First Claim
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1. A method of detecting the endpoint of epitaxially grown silicon comprising the steps of:

  • providing a working wafer having a silicon substrate;

    providing a monitor wafer having a substrate, an oxide layer disposed on said substrate, and a polysilicon layer disposed on said oxide layer;

    growing an epitaxial layer on said working wafer and said monitor wafer simultaneously;

    etching said working wafer and said monitor wafer;

    detecting an endpoint between said polysilicon layer and said oxide layer of said monitor wafer using a laser; and

    halting said etching when said endpoint is detected by said laser.

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