Lithographic apparatus for the production of microstructures

• US 4,724,328 A
• Filed: 01/30/1986
• Issued: 02/09/1988
• Est. Priority Date: 02/12/1985
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Lischke, Burkhard
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US06/824,237
• Time in Patent Office: 740 Days
• Field of Search: 250/396 R, 250/396 ML, 250/398, 250/492.2, 219/121 EB
• US Class Current: 250/492.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 37/3007 Electron or ion-optical systems
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe

Abstract

Lithographic apparatus for producing microstructures which comprises a particle beam source 1 and a condenser lens system 2, 3 and a controllable aperture diaphragm 4 having line-shaped multi-hole structures 17 . . . 22 for generating a plurality of particle beam fingers. A blanking diaphragm and an imaging optic structure 6, 7 OL are also provided. The invention produces a higher output of exposed structures than the prior art and for this purpose the particle beams are combined to form a ribbon beam which has the greatest cross-sectional dimension 12, 13 approximately in the longitudinal direction 23 of the line-shaped multi-hole structure 17 . . . 22 and which has the smallest cross-sectional dimension which does not significantly exceed the width of the multi-hole structure. The multiple beams are utilized in lithographic apparatus for generating semiconductor circuits in the submicrometer region on a GaAs base and for generating components for optical communications technology.

Claims

1. A lithography apparatus for producing microstructures comprising, a particle beam source, a condenser lens system (2, 3), a controllable aperture diaphragm (4) having a line-shaped multi-hole structure (17 . . . 22) for generating a plurality of particle beam fingers, a blanking diaphragm (5), an imaging optics (6, 7, OL) and a workpiece particularly a semiconductor body (9), characterized in that the particle beam is formed into a ribbon beam with a larger cross-sectional dimension (12, 13) which extends roughly in the longitudinal direction (23) of said line-shaped multi-hole structure (17 . . . 22) and which has a smaller cross-sectional dimension which does not significantly exceed the width of said multi-hole structure, deflection electrodes for individual blanking of the particle probes are mounted on the aperture diaphragm;

said deflection electrodes are formed as conducting paths connected and are arranged at the edges of the holes of the multi-hole structure.

2. A lithography apparatus according to claim 1, characterized in that a cylindrical lens (2) which generates said ribbon beam is provided between said particle beam (1) and said aperture diaphragm (4).

3. A lithogrpahy apparatus according to claims 1 or 2, characterized in that said particle beam source (1) contains a pin-shaped single-crystal cathode (1a) which is formed with a knife-blade portion.

4. A lithography apparatus according to claim 3, characterized in that said pin-shaped single-crystal cathode (1a) is composed of LaB₆.

5. A lithography apparatus according to claim 1 or claim 2 characterized in that said multi-hole structure of said aperture diaphragm (4) comprises approximately rectangular or quadratic recesses (17 . . . 22) which emanate from a center line (23) and are respectively alternatively offset toward one and the other side;

and in electrodes (24,

     30) for the deflection of the particle beam fingers generated by the recesses are mounted at the sides of every recess (17) which emanate from said center line (23).

6. A lithography apparatus according to one of the claim 1 or claim 2, characterized in that said multi-hole structure of said aperture diaphragm (4) comprises approximately rectangular or quadratic recesses (32) which are mounted along a line (23) and have mutual spacings which correspond to their dimensions in the direction of said line (23);

and in that electrodes (34,

     35) are mounted at the sides of every recess (32) parallel to said line, and are positioned for deflecting of the particle beam fingers generated by a recess (32).

7. A lithography apparatus according to claim 5 characterized in that said aperture diaphragm is composed of a high-resistant substrate, particularly of silicon or silicon dioxide, on which said electrodes (24, 30, 34, 35) are formed in the form of interconnects and which are provided with terminals for supplying blanking voltages thereto.

8. A lithography apparatus according to claim 7, characterized in that said interconnects are formed of gold.

9. A lithography apparatus according to claim 5, characterized in that the electrodes mounted in the region of said center line (23) associated with some or all said recesses (17 . . . 22) are combined to form a common electrode (30), and said electrodes are connected to each other by intermediate webs.

10. A lithography apparatus according to claim 7 characterized in that said substrate is provided with a conductive coating for diverting the incident particles and which is provided outside of said multi-hole structure on the side facing said particle beam source (1).

11. A lithography apparatus according to claim 1 characterized in said aperture diaphragm (4a) comprises recesses (17a . . . 22a) said recesses being penetrated by the particle beam fingers;

and further electrodes (17b, 17c . . . 22b, 22c) are provided at the sides of said recesses (17a . . . 22a) which extend perpendicular to the center line (23) of said multi-hole structure, said further electrodes serves for deflecting the particle beam fingers in the direction of said center line (23).

12. A lithography apparatus according to claim 1 or claim 2, characterized in that a magnetic or electric zoom lens (48) is provided between said aperture diaphragm (4) and said semiconductor body (9) for the purpose of varying the imaging scale, and the focal length and effective spacing from said aperture diaphragm (4) of said zoom lens being variable in the same direction.

13. A lithography apparatus according to claim 12, characterized in that said zoom lens (48) comprises three additional auxiliary windings (50) in addition to the winding (49) which generates the main field, said auxiliary windings respectively positioned symmetrically relative to the longitudinal lens axis, and for effecting a focal length adjustment, and the center auxiliary winding thereof attenuating or, respectively, amplifying said main field and the other two auxiliary windings amplifying or, respectively, attenuating said main field;

and two further lens windings are respectively provided symmetrically relative to the longitudinal lens axis with one thereof respectively attenuating said main field and the other respectively amplifying said main field so that said main field which is changed to cause a longitudinal displacement of said zoon lens (48).

14. A lithography apparatus according to claim 1 or claim 2 characterized in that the lenses of said imaging optics respectively comprise paired telecentric beam paths and are subjected to oppositely applied identical excitations.

15. A lithography apparatus according to claim 1 or claim 2 characterized in that said body (9) is movable mounted in a direction (41) roughly perpendicular to the longitudinal direction (23) of said line-shaped hole structure (17 . . . 22) and parallel to the surface of said body (9) which is to be structured.

16. A lithography apparatus according to claim 15, characterized in that said body (9) is mounted on a rotating support (10) which is rotatable around a shaft (11) mounted a fixed distance from said body (9).