Infrared display device

• US 4,724,356 A
• Filed: 10/10/1986
• Issued: 02/09/1988
• Est. Priority Date: 10/10/1986
• Status: Expired due to Fees

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: Lockheed Martin Space Operations Company (Martin Marietta Corporation)
• Inventors: Daehler, Max
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): Powell, Mark R.
• Application Number:
  US06/917,882
• Time in Patent Office: 487 Days
• Field of Search: 250/493.1, 250/494.1, 250/495.1, 250/503.1, 250/504 R, 219/543, 219/552, 219/553, 357/4, 357/8, 357/17, 357/51, 338/308, 338/309, 338/314, 156/628, 156/647
• US Class Current: 313/522
• CPC Class Codes: F41J 2/02 Active targets transmitting infrared radiation
• CPC Class Codes: G01J 5/53 Reference sources, e.g. standard lamps; Black bodies
• CPC Class Codes: H01K 1/14 characterised by the shape
• CPC Class Codes: H01K 1/18 Mountings or supports for the incandescent body
• CPC Class Codes: H01L 27/156 two-dimensional arrays

Abstract

A matrix of infrared generating cells is disclosed. Each cell includes a resistive element formed over and traversing a cavity formed on the surface of the supporting semiconductor substrate.

Claims

1. A display device comprising:

a semiconductor substrate having a first surface portion having an inverted pyramid cavity formed in said first surface;

an infrared generating cell comprising a resistive element and a diode;

said diode is formed on the first surface of said semiconductor substrate adjacent to said inverted pyramid cavity and is connected to said resistive element;

and wherein said resistive element bridges said inverted pyramid cavity.

2. A display device array comprising:

a semiconductor substrate having a first surface portion including an array of inverted pyramid cavities formed in said first surface;

a plurality of infrared generating cells, each infrared generating cell comprising a resistive element and a diode;

each of said diodes formed on the first surface of said semiconductor substrate adjacent to an inverted pyramid cavity;

each of said diodes connected to a resistive element;

each of said resistive elements bridging one of said inverted pyramid cavities.

3. The method of fabricating a display device on a semiconductor, said method comprising the following steps:

coating a silicon dioxide layer on a first surface of said semiconductor;

etching at least one first window in said silicon dioxide layer to outline the desired dimensions and shape of the desired resistive element;

doping the area defined by said window to form a resistive element;

oxidizing said first surface of said semiconductor, including said window;

opening at least one second window in said oxidized layer to outline a square superimposed on said resistive element;

etching the area defined by said second window to form an inverted pyramid-shaped cavity; and

,

establishing electrical connections to said resistive elements.