Electrical overstress protection material and process

• US 4,726,991 A
• Filed: 07/10/1986
• Issued: 02/23/1988
• Est. Priority Date: 07/10/1986
• Status: Expired due to Term

• Current Assignee: EOS Biotechnology, Inc. (PDL BioPharma, Inc.)
• Original Assignee: EOS Biotechnology, Inc. (PDL BioPharma, Inc.)
• Inventors: Hyatt, Hugh M., Shrier, Karen P.
• Primary Examiner(s): Cannon, James C.
• Application Number:
  US06/883,933
• Time in Patent Office: 593 Days
• Field of Search: 174/127, 252/504, 252/506, 252/507, 252/511, 252/512, 252/513, 252/514, 252/516, 252/518, 252/519, 252/520, 338/21, 361/91, 361/127, 427/215, 427/216, 427/217, 428/403, 428/404, 428/328, 428/329, 428/331
• US Class Current: 428/329
• CPC Class Codes: H01B 7/2813 Protection against damage caused by electrical, chemical or water tree deterioration
• CPC Class Codes: H01C 7/10 voltage responsive, i.e. varistors
• CPC Class Codes: H05K 9/0066 Constructional details of transient suppressor
• CPC Class Codes: Y02A 30/14 Extreme weather resilient electric power supply systems, e.g. strengthening power lines or underground power cables
• CPC Class Codes: Y10T 428/257 Iron oxide or aluminum oxide

Abstract

A material provides protection against electrical overstress transients having rise times as rapid as a few nanoseconds or less. The material comprises a matrix formed of a mixture of separate particles of conductive materials and separate particles of semiconductor materials coated with insulating material to provide chains of the particles within the matrix with interparticle separation distances along the chains less than several hundred angstroms, thereby to permit quantum-mechanical tunneling of electrons between the separate particles in response to high energy electrical transients.

Claims

1. A non-linear resistance material to provide electrical overstress protection against electrical transients, the material comprising a matrix formed of a mixture of:

(a) separate particles of conductive materials, the sizes of the majority of the conductive particles being less than about several hundred microns;

(b) separate particles of semiconductor materials, the sizes of the majority of the semiconductor particles being less than about several hundred microns; and

(c) inorganic insulating material coating the particles of conductive material and the particles of semiconductor material to provide chains of the particles within the matrix with interparticle separation distances along the chains less than about several hundred angstroms, on average, thereby permitting substantial non-linear conduction between particles in said chains by quantum-mechanical tunneling of electrons in response to electrical transients.

2. A material according to claim 1 further including binder material in which said particles are generally homogeneously suspended.

3. A material according to claim 1 wherein the conductive particles have sizes less than about 100 microns.

4. A material according to claim 3 wherein the sizes of the particles of semiconductor material range from about 0.1 microns to 100 microns.

5. A material according to claim 4 wherein the number of semiconductor particles having sizes less than the lower boundary of said range far exceeds the number of semiconductor particles having diameters greater than the upper boundary of said range.

6. A material according to claim 1 wherein the conductive particles include particles of carbonyl nickel.

7. A material according to claim 1 wherein the conductive particles include materials within the class including titanium carbide, nickel, tungsten carbide, boron carbide, zirconium carbide, carbon black, graphite, copper, aluminum, molybdenum, silver, gold, zinc, brass, cadmium, bronze, iron, tin, beryllium, lead, borides, tantalum carbide, and Mu-metal.

8. A material according to claim 5 wherein the conductive particles have resistivities ranging from about 10^-1 to about 10^-6 ohms per centimeter.

9. A material according to claim 2 wherein the percentage, by weight, of conductive particles in the material is greater than about 1% and less than about 45%.

10. A material according to claim 2 wherein the binder material is an electrical insulator.

11. A material according to claim 10 wherein the binder material is a polymer.

12. A material according to claim 10 wherein the percentage, by weight, of the binder material is greater than about ten percent (10%) of the matrix material.

13. A material according to claim 10 wherein the binder material is selected from the class including thermoset polymers, thermoplastic, rubber, polymer alloys and blends.

14. A material according to claim 1 wherein the conductive particles have numerous sharp points to provide interparticle field enhancement.

15. A material according to claim 1 wherein the insulating material coats individual ones of the semiconductor particles.

16. A material according to claim 15 wherein the insulating material includes fumed silicon dioxide.

17. A material according to claim 16 wherein the fumed silicon dioxide includes Cab-O-Sil.

18. A material according to claim 1 wherein the insulating material coating the particles includes fumed silicon dioxide, haolin, kaolinite, aluminum trihydrate, feld spar, various forms of silica, glass spheres, calcium carbonate, barium sulphate, or calcium sulphate.

19. A material according to claim 2 wherein the binder material has resistivity ranging from about 10¹² to about 10¹⁵ ohms per centimeter.

20. A material according to claim 1 wherein the conductive particles, the semiconductor particles and the insulator material are chosen to provide a clamping voltage of several hundred volts.

21. A process for formulating a non-linear resistance material to protect against electrical transients comprising the steps of:

(a) providing separate particles of conductive materials and particles of semiconductor materials, the sizes of the particles being generally less than several hundred microns;

(b) coating each of the particles of conductive materials and each of the particles of semiconductor materials with inorganic insulating material; and

(c) mixing the coated particles of conductive materials with the coated particles of semiconductor materials to form a generally homogeneous matrix with a myriad of chains of adjacent particles wherein the particles are spaced apart by the insulating coating by no more than several hundred angstroms to allow substantial electron conduction between particles by quantum-mechanical tunneling in response to applied electrical transients.

22. A process according to claim 21 further including adding binder material to suspend the mixture of particles of conductive and semiconductor materials.

23. A process according to claim 21 wherein the particles of conductive materials are sized less than about 100 microns.

24. A process according to claim 23 wherein the particles of semiconductor material range in size from about 0.1 microns to 100 microns.

25. A process according to claim 21 wherein the particles of conductive and semiconductor material are separately coated with the insulating material prior to being mixed together.

26. A process according to claim 25 wherein the coated particles of conductive material are mixed with a binder material and then the particles of semiconductor material are mixed with the mixture of binder material and conductive particles.

27. A process according to claim 21 wherein the particles of conductive material include carbonyl nickel.

28. A process according to claim 21 wherein the conductive particles include materials within the class including titanium carbide, nickel, tungsten carbide, boron carbide, zirconium carbide, carbon black, graphite, copper, aluminum, molybdenum, silver, gold, zinc, brass, cadmium, bronze, iron, tin, beryllium, lead, borides, tantalum carbide or Mu-metal.

29. A process according to claim 22 wherein the percentage, by weight, of conductive particles in the material is greater than about 1% and less than about 45%.

30. A process according to claim 22 wherein the binder material is an electrical insulator.

31. A process according to claim 30 wherein the binder material is a polymer.

32. A process according to claim 30 wherein the percentage, by weight, of the binder material is greater than about ten percent (10%) of the matrix material.

33. A process according to claim 21 wherein the insulating material is coated upon individual ones of the semiconductor particles.

34. A process according to claim 33 wherein the insulating material includes fumed silicon dioxide.

35. A non-linearly resistance device for protecting against electrical transients, the device comprising:

(a) a matrix of a non-linearly resistive material consisting of a random mixture of separate particles of conductive materials and semiconductor materials with inorganic insulating material coating the conductive particles and the semiconductor particles to separate the particles in chains of particles of conductive materials and semiconductor materials by distance sufficiently small to permit quantum-mechanical tunneling of electrons between said particles in response to electrical transients; and

(b) electrode means for electrically coupling the matrix material between ground and an electrical means to be protected from electrical transients.

36. A device according to claim 35 further including insulating binder material in which said separate particles are generally homogeneously suspended.