Hyperfrequency oscillator operating in the millimetric band

• US 4,727,338 A
• Filed: 05/12/1986
• Issued: 02/23/1988
• Est. Priority Date: 05/15/1985
• Status: Expired due to Fees

• Current Assignee: Thomson-CSF
• Original Assignee: Thomson-CSF
• Inventors: Bert, Alain, Mamodaly, Narguise
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): Mis, David
• Application Number:
  US06/861,726
• Time in Patent Office: 652 Days
• Field of Search: 331/96, 331/107 DP, 331/107 G, 331/117 D
• US Class Current: 331/96
• CPC Class Codes: H03B 2009/126 using impact ionization avalanche transit time [IMPATT] diodes
• CPC Class Codes: H03B 9/148 the frequency being determined by a dielectric resonator H03B9/141 - H03B9/143 take precedence

Abstract

The invention concerns a negative resistance hyperfrequency oscillator, operating in the millimetric band, comprising a waveguide delimited on one side by an iris and a useful load and on the other side by a supplementary load, wherein a Gunn or Impatt diode is polarized and coupled to the waveguide by means of an aerial, the resonator cavity of this oscillator being delimited by the iris and by a dielectric resonator placed in the waveguide between the aerial and the supplementary load, and double coupling being provided between the resonator and the guide and between the diode to the guide to produce a stable and relatively noiseless oscillator. The invention can be applied to hyperfrequency systems, for synchronizing hyperfrequency sources and conjugating their power.

Claims

1. Hyperfrequency oscillator, operating in the millimetric band, comprising a wave guide closed at a first end by an iris diaphragm and by a useful load impedance and at a second end by a supplementary load impedance and also comprising a negative resistance semiconductor element, electrically polarized by means of an aerial that couples the semiconductor element to the waveguide, said oscillator further comprising a resonator cavity, in the waveguide, delimited by the iris diaphragm and by a dielectric resonator placed in the waveguide at a location between the aerial that couples the semiconductor element and the supplementary load.

2. Oscillator according to claim 1, wherein the negative resistance semiconductor element is a hyperfrequency diode of the Gunn or Impatt type.

3. Oscillator according to claim 2, wherein the dielectric resonator is placed in the waveguide at such a distance from the aerial that at the resonance frequency it is equivalent to a load of high reflection coefficient.

4. Oscillator according to claim 2, wherein the waveguide is arranged in double coupling with the diode and the resonator.

5. Oscillator according to claim 4, wherein the coupling of the resonator with the waveguide uses the fundamental mode of the resonator.

6. Oscillator according to claim 1, wherein the dielectric resonator has the shape of a sphere, cylinder or parallelepiped.

7. Oscillator according to claim 1, wherein the dielectric resonator is maintained in position, on the axis of the waveguide by means of a material that is not subject to absorption under hyperfrequency conditions.

8. Oscillator according to claim 1, wherein the dielectric resonator is made of a material such as alumina, barium titanate, zirconium and tin titanate, having a high overvoltage coefficient.

9. Oscillator according to claim 8, wherein the material of the dielectric resonator is selected so as to compensate the frequency shift as a function of temperature.

10. Oscillator according to claim 2, wherein the iris modifies the susceptance as defined on the diode so that the oscillation frequency coincides with the natural resonance frequency of the dielectric resonator.

11. Oscillator according to claim 10, wherein the operation of the cavity thus delimited is of the monomode type as opposed to the multimode operation of a metallic cavity.