Semiconductor power module with an integrated heat pipe

• US 4,727,455 A
• Filed: 02/14/1986
• Issued: 02/23/1988
• Est. Priority Date: 02/14/1985
• Status: Expired due to Fees

• Current Assignee: Brown Boveri & CIE AG (ABB Limited)
• Original Assignee: Brown Boveri & CIE AG (ABB Limited)
• Inventors: Wessjohann, Hans G., Neidig, Arno
• Primary Examiner(s): Scott, J. R.
• Assistant Examiner(s): WILLIAMS, HOWARD L
• Application Number:
  US06/830,065
• Time in Patent Office: 739 Days
• Field of Search: 174/15 R, 174/15 HP, 165/104.33, 357/82, 361/380, 361/381, 361/382, 361/385, 361/388, 361/389
• US Class Current: 361/700
• CPC Class Codes: F28D 15/0233 the conduits having a particular shape, e.g. non-circular cross-section, annular F28D15/0241, F28D15/0266 take precedence
• CPC Class Codes: F28D 15/046 characterised by the material or the construction of the capillary structure
• CPC Class Codes: F28F 2013/006 Heat conductive materials
• CPC Class Codes: F28F 2225/04 for conduits
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1301 Thyristor

Abstract

A semiconductor power module includes a metallized ceramic carrier plate having an opening formed therein, a semiconductor power component with a base area of a given size adjacent the ceramic plate at the opening, a heat pipe integrated in the semiconductor power module having a vapor space, a condensation zone and a heating zone for distributing heat removed from the semiconductor power component at the heating zone over an area of the condensation zone being larger than the given area, a highly heat-conducting ceramic base plate having two metallized sides, and a frame vacuum-tightly interconnecting the carrier plate and the base plate forming the vapor space of the heat pipe therebetween.

Claims

1. Semiconductor power module, comprising a metallized ceramic carrier plate having an opening formed therein, a semiconductor power component with a base area of a given size adjacent said ceramic plate at said opening, a heat pipe integrated in the semiconductor power module having a vapor space, a condensation zone and a heating zone for distributing heat removed from said semiconductor power component at said heating zone over an area of said condensation zone being larger than said given size, a highly heat-conducting ceramic base plate having two metallized sides, a frame sealingly interconnecting said carrier plate and said base plate forming said vapor space of said heat pipe therebetween, and a working liquid in said heat pipe, all parts of said heat pipe contacting said working liquid being formed of a material from the group consisting of ceramic, copper and copper-coated material.

2. Semiconductor power module according to claim 1, including a compensation disc disposed between said carrier plate and said semiconductor power component.

3. Semiconductor power module according to claim 1, including a capillary structure in said heat pipe transporting said working liquid back to said heating zone at said semiconductor power component from said condensation zone.

4. Semiconductor power module according to claim 1, including bracing elements disposed between said carrier plate and said base plate.

5. Semiconductor power module according to claim 2, wherein said base plate, frame, carrier plate and compensation disc are interconnected by direct bonding forming walls of said heat pipe.

6. Semiconductor power module according to claim 1, wherein said base plate is formed of ceramic with a purity of at least 96% Al₂ O₃.

7. Semiconductor power module according to claim 1, wherein said base plate is formed of ceramic with a purity of 99.5% Al₂ O₃.

8. Semiconductor power module according to claim 1, including a heat distributing element formed of highly heat-conducting material disposed in said heating zone of said heat pipe.

9. Semiconductor power module according to claim 2, including a heat distributing element formed of highly heat-conducting material disposed in said heating zone of said heat pipe.

10. Semiconductor power module according to claim 9, wherein said heat distributing element has a side facing said vapor space with a fin structure formed therein.

11. Semiconductor power module according to claim 8, wherein said heat distributing element is formed of copper.

12. Semiconductor power module according to claim 9, wherein said heat distributing element is soldered to said compensation disc.

13. Semiconductor power module according to claim 9, wherein said heat distributing element and said compensation disc are integral with each other in one structural part formed of a material matched to said semiconductor power component with respect to thermal coefficient of expansion.

14. Semiconductor power module according to claim 1, including a cooling body connected to said base plate.