Layered amorphous silicon electrophotographic photosensitive member comprises BN surface layer and BN barrier layer

• US 4,729,937 A
• Filed: 12/18/1986
• Issued: 03/08/1988
• Est. Priority Date: 12/26/1985
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yamazaki, Mutsuki
• Primary Examiner(s): NOT, DEFINED
• Application Number:
  US06/943,190
• Time in Patent Office: 446 Days
• Field of Search: 430/66, 430/65
• US Class Current: 430/65
• CPC Class Codes: G03G 5/08228 at least one with varying composition
• CPC Class Codes: G03G 5/144 comprising inorganic material
• CPC Class Codes: G03G 5/14704 comprising inorganic material

Abstract

An electrophotographic photosensitive member wherein a photoconductive layer prepared from amorphous silicon is interposed between a barrier layer and surface layer, both prepared from boron nitride, and which is characterized in that it has a high specific resistivity, and, when applied as a barrier layer, indicates a high charge retention capability, strains in said barrier layer are reduced, the surface layer absorbs very little light and allows for the permeation of the greater part of the incoming light rays, thus preventing the photosensitivity of a photoconductive layer and the residual potential from being deteriorated, and since the concentration of boron varies in the boundary of the respective layer across their thickness, the photoconductive property can be sustained and the exfoliation of the layers can be avoided.

Claims

1. An electrophotographic photosensitive member comprising:

a substrate;

a photoconductive layer comprising boron-containing amophous silicon;

a barrier layer, provided between said substrate and said photoconductive layer, for substantially inhibiting injection of carriers from said substrate to said photoconductive layer and;

a covering layer provided on said photoconductive layer, said barrier layer and said covering layer consisting essentially of boron nitride.

2. The member according to claim 1 wherein said barrier layer contains 10 to 100 atomic % of nitrogen.

3. The member according to claim 2, wherein said barrier layer contains 1 to 50 atomic % of an element selected from the group consisting of hydrogen and halogen element.

4. The member according to claim 3, wherein said barrier layer has a thickness of 50 Å

to 5 microns.

5. The member according to claim 1, wherein said photoconductive layer contains at least one element selected from the group consisting of carbon, nitrogen and oxygen.

6. The member according to claim 1, wherein said photoconductive layer is doped with an element selected from the group consisting of elements belonging to Group III or V of the periodic table.

7. The member according to claim 1, wherein said surface layer contains 10 to 200 atomic % of nitrogen.

8. The member according to claim 7, wherein said covering layer has a thickness of 0.1 micron or more, and the content of nitrogen is 50 atomic % or more.

9. The member according to claim 8, wherein said covering layer contains 1 to 50 atomic % of an element selected from the group consisting of hydrogen and halogen element.

10. An electrophotographic photosensitive member which comprises:

a substrate;

a photoconductive layer comprising amorphous silicon;

a barrier layer consisting essentially of boron nitride and provided between said conductive substrate and photoconductive layer, the concentration of boron varying near the boundary between said barrier layer and photoconductive layer in the direction normal to said barrier layer; and

a covering layer consisting essentially of boron nitride and provided on said photoconductive layer, the concentration of boron varying near the boundary between said covering layer and photoconductive layer in the direction normal to said surface layer.

11. The member according to claim 10, wherein said barrier layer contains 10 to 100 atomic % of nitrogen.

12. The member according to claim 11, wherein said barrier layer contains 1 to 50 atomic % of an element selected from the group consisting of hydrogen and halogen elements.

13. The member according to claim 12, wherein said barrier layer has a thickness of 50 Å

to 5 microns.

14. The member according to claim 10, wherein said photoconductive layer contains at least one element selected from the group consisting of carbon, nitrogen and oxygen.

15. The member according to claim 10, wherein said photoconductive layer is doped with an element selected from the group consisting of elements belonging to Group III or V of the periodic table.

16. The member according to claim 10, wherein said covering layer contains 10 to 200 atomic % of nitrogen.

17. The member according to claim 16, wherein said covering layer has a thickness of 0.1 micron or more, and the content of nitrogen is 50 atomic % or more.

18. The member according to claim 17, wherein said surface layer contains 1 to 50 atomic % of an element selected from the group consisting of hydrogen and halogen elements.