Conversion process for passivating short circuit current paths in semiconductor devices
First Claim
1. A method of passivating short circuit defects in an electronic device of the type including a thin film body having a superposed electrode comprised of a layer of transparent, electrically conductive oxide material, said method including the steps of:
- providing a conversion reagent in contact with at least those portions of the electrode proximate said defects, said reagent adapted to convert the electrically conductive electrode material to a material of higher electrical resistivity; and
activating said conversion reagent proximate said defects so as to alter the stoichiometry of the transparent conductive oxide material to the higher resistivity form, whereby said defect regions are substantially electrically isolated from the remainder of said electrode.
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Accused Products
Abstract
An electronic device of the type including a thin film body having a superposed electrode has short circuit defects therein passivated by a conversion process in which the electrical resistivity of the electrode material is increased proximate the defect regions. Conversion is accomplished by exposing the electrode material to a conversion reagent and activating the reagent proximate the defect regions. The process may be utilized for a variety of differently configured devices, and may be readily adapted for use in a roll-to-roll device fabrication process.
65 Citations
17 Claims
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1. A method of passivating short circuit defects in an electronic device of the type including a thin film body having a superposed electrode comprised of a layer of transparent, electrically conductive oxide material, said method including the steps of:
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providing a conversion reagent in contact with at least those portions of the electrode proximate said defects, said reagent adapted to convert the electrically conductive electrode material to a material of higher electrical resistivity; and activating said conversion reagent proximate said defects so as to alter the stoichiometry of the transparent conductive oxide material to the higher resistivity form, whereby said defect regions are substantially electrically isolated from the remainder of said electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of passivating short circuit defects in an electronic device of the type including a thin film body having a superposed electrode comprised of a layer of electrically conductive material, said method including the steps of:
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providing a conversion reagent, including therein a Lewis Acid, in contact with at least those portions of the electrode proximate said defects, said reagent adapted to convert the electrically conductive electrode material to a material of higher electrical resistivity; and activating said conversion reagent proximate said defects so as to facilitate conversion of the electrode material to the higher resistivity form, whereby said defect regions are substantially electrically isolated from the remainder of said electrode.
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10. A method of passivating short circuit defects in an electronic device of the type including a thin film body having a superposed electrode comprised of a layer of electrically conductive material, said method including the steps of:
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providing a conversion reagent, including therein a salt of an amphoteric element, in contact with at least those portions of the electrode proximate said defects, said reagent adapted to convert the electrically conductive electrode material to a material of higher electrical resistivity; and activating said conversion reagent proximate said defects so as to facilitate conversion of the electrode material to the higher resistivity form, whereby said defect regions are substantially electrically isolated from the remainder of said electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification