Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer

• US 4,732,621 A
• Filed: 06/10/1986
• Issued: 03/22/1988
• Est. Priority Date: 06/17/1985
• Status: Expired due to Term

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Murata, Kenji, Kishi, Yasuo
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/872,684
• Time in Patent Office: 651 Days
• Field of Search: 156/625, 156/647, 156/648, 156/663, 136/256, 136/258 AM, 427/331, 427/337, 427/343, 29/572, 437/2, 437/181, 357/30 J, 357/30 K
• US Class Current: 136/256
• CPC Class Codes: H01L 31/02366 of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method for processing a transparent conductive oxide (TCO) layer in accordance with the present invention comprises the steps of: uniformly depositing the TCO layer on a substantially flat surface of a transparent substrate; and etching the exposed surface of the TCO layer thereof to roughen the exposed surface. The so-treated TCO layer is used as a transparent electrode in photovoltaic devices and has a decreased, substantially constant reflectance throughout the visible light range.

Claims

1. A method for producing a transparent conductive oxide (TCO) layer on a transparent substrate having a substantially flat surface, comprising the following steps:

uniformly depositing said TCO layer on said substantially flat surface of said transparent substrate; and

chemically etching in an anisotropic manner with a chemical solution the entire exposed surface of said TCO layer for roughening said exposed surface thereby to provide a decreased, substantially constant light reflectance throughout the visible light range, wherein said exposed surface is roughened to have an unevenness of about 1000-5000 Å

with a periodicity of about 2000-10,000 Å

.

2. The method of claim 1, wherein said TCO layer comprises indium tin oxide.

3. The method of claim 2, wherein said TCO layer is doped with 5 wt.% SnO_X.

4. The method of claim 2, wherein said exposed surface is etched with an etchant of concentrated HCl:

H₂ O;

FeCl₃ =500 cc;

600 cc;

100 g.

5. The method of claim 2, wherein said exposed surface is etched with aqua regia.

6. The method of claim 1, wherein said TCO layer comprises aggregated TCO particles with a mean particle size of about 500-2000 Å

.

7. A photovoltaic device comprising a transparent substrate with a substantially flat surface;

a front electrode of a TCO layer formed on said flat surface of said substrate, said TCO layer having a chemically etched exposed surface having a roughness assuring a decreased, substantially constant reflectance throughout the visible light range, wherein said roughness of said exposed surface has an unevenness of about 1000-5000 Å

with a periodicity of about 2000-10,000 Å

;

a semiconductor layer for photoelectric conversion formed on said exposed surface of said TCO layer; and

a back electrode formed on said semiconductor layer.

8. The photovoltaic device of claim 7, wherein said TCO layer comprises indium tin oxide.

9. The photovoltaic device of claim 8, wherein said TCO layer is doped with 5 wt.% SnO_X.

10. The photovoltaic device of claim 8, wherein said rough surface is formed with a etchant of conc. HCl:

H₂ O;

FeCl₃ =500 cc;

600 cc;

100 g.

11. The photovoltaic device of claim 8, wherein said rough surface is formed with aqua regia.

12. The photovoltaic device of claim 7, wherein said TCO layer comprises aggregated TCO particles with a mean particle size of about 500-2000 Å

.