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Tri-level resist process for fine resolution photolithography

  • US 4,732,841 A
  • Filed: 03/24/1986
  • Issued: 03/22/1988
  • Est. Priority Date: 03/24/1986
  • Status: Expired due to Term
First Claim
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1. A method for defining very small features on a semiconductor substrate, said method comprising:

  • forming a planarizing layer on the substrate to a thickness sufficient to planarize topographic features on the substrate;

    forming an image transfer layer over the planarizing layer, by applying a curable liquid silicone resin over the substrate;

    curing the image transfer layer in a non-oxidizing plasma;

    forming an imaging layer over the cured image transfer layer, said layer being a photoresist and having a thickness below 0.5 μ

    m;

    patterning the imaging layer by photolithography;

    transferring the pattern in the imaging layer to the image transfer layer;

    transferring the pattern in the image transfer layer to the planarizing layer; and

    defining features on the substrate based on the pattern in the planarizing layer.

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