Process for manufacturing capacitive devices and capacitive devices manufactured by the process

• US 4,733,328 A
• Filed: 12/18/1986
• Issued: 03/22/1988
• Est. Priority Date: 09/24/1984
• Status: Expired due to Fees

• Current Assignee: Alliedsignal Inc. (Honeywell International Inc.)
• Original Assignee: Allied Corp. (Honeywell International Inc.)
• Inventors: Blazej, Daniel C.
• Primary Examiner(s): GRIFFIN, DONALD
• Application Number:
  US06/943,526
• Time in Patent Office: 460 Days
• Field of Search: 361/320, 361/321, 361/304, 361/305, 361/306, 29/25.42
• US Class Current: 361/320
• CPC Class Codes: H01G 4/06 Solid dielectrics
• CPC Class Codes: H01G 4/35 Feed-through capacitors or anti-noise capacitors
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

This invention relates to a laminated capacitive element for use in electrical devices such as filtered connectors, said element comprising a laminated body of a metal substrate having one or more layered structures heat bonded to all or a portion of the surfaces thereof, said structures comprising a non-conductive layer composed of a sintered finely divided non-conductive material heat bonded to said metal substrate and a metal conductive layer composed of sintered finely divided metal heat bonded to said sintered non-conductive material.

Claims

1. A capacitive element which comprises:

a laminated body comprising a metal substrate having one or more layered structures heat bonded to all or a portion of the surfaces thereof, each of said structures comprising a nonconductive layer comprised of sintered finely divided barium titanate and one or more glasses selected from the group consisting of alkali metal borates, silicates and germanates heat bonded to said metal substrate, and a metal conductive layer comprised of a sintered finely divided metal heat bonded to said non-conductive layer.

2. A capacitive element according to claim 1 wherein said first metal substrate is composed of copper, iron, platinum, aluminum, silver, gold, nickel, palladium or an alloy thereof.

3. A capacitive element according to claim 2 wherein said metal substrate is composed of copper.

4. A capacitive element according to claim 1 wherein the thickness of said metal substrate is from about 0.025 mils to about 0.75 mm.

5. A capacitive element according to claim 4 wherein said thickness is from about 0.075 to about 0.6 mm.

6. A capacitive element according to claim 5 wherein said thickness is from about 0.125 to about 0.5 mm.

7. A capacitive element according to claim 6 wherein said thickness is from about 0.2 to about 0.4 mm.

8. A capacitive element according to claim 1 wherein the thickness of said non-conductive layer is from about 0.020 to about 0.10 mm.

9. A capacitive element according to claim 8 wherein said thickness is from about 0.025 to about 0.085 mm.

10. A capacitive element according to claim 9 wherein said thickness is from about 0.030 to about 0.070 mm.

11. A capacitive element according to claim 10 wherein said thickness is from about 0.040 to about 0.060 mm.

12. A capacitive element according to claim 1 wherein said metal conductive layer is composed of a metal selected from the group consisting of copper, nickel, gold, palladium, platinum, iron, aluminum, silver, and alloys thereof.

13. A capacitive element according to claim 12 wherein said metal is selected from the group consisting of copper, silver, palladium and an alloy thereof.

14. A capacitive element according to claim 13 wherein said metal is copper.

15. A capacitive element according to claim 1 wherein the thickness of said second metal conductive layer is from about 0.005 to about 0.075 mm.

16. A capacitive element according to claim 15 wherein said thickness is from about 0.01 mm to about 0.06 mm.

17. A capacitive element according to claim 16 wherein said thickness is from about 0.015 to about 0.05 mm.

18. A capacitive element according to claim 17 wherein said thickness is from about 0.02 to about 0.03 mm.

19. A capacitive element according to claim 1 wherein the thickness of said metal substrate is greater than the thickness of each of said non-conductive layer and said metal conductive layer.

20. A capacitive element according to claim 19 wherein the thickness of said metal substrate is at least two times the thickness of each of said non-conductive layer.

21. A capacitive element according to claim 1 wherein said non-conductive layer consists essentially of barium titanate and one or more glasses selected from the group consisting of alkali metal borates, silicates and germanates.

22. A capacitive element according to claim 1 wherein said conductive layer consists of barium titanate and one or more glasses selected from the group consisting of alkali metal borates, silicates and germanates.

23. A capacitive device according to claim 1 wherein said alkali metal is lithium or potassium.

24. A capacitive element according to claim 23 wherein said alkali metal is lithium.

25. A capacitive element according to claim 24 wherein said glasses are selected from the group consisting of alkali metal borates and germanates.

26. A capacitive element according to claim 25 wherein said glasses are selected from the group consisting of alkali metal borates.

27. A capacitive element according to claim 26 wherein said alkali metal is selected from the group consisting of lithium and potassium.

28. A capacitive element according to claim 27 wherein alkali metal is lithium.

29. A capacitive element according to claim 1 wherein said glasses are selected from the group consisting of LiBO₂, Li₂ B₈ O₁₃ and Li₂ O.sub.(0.16) B₂ O₃(0.74) SiO₂(0.10).

30. A capacitive element according to claim 29 wherein said glasses are selected from the group consisting of LiBO₂ and Li₂ B₈ O₁₃.

31. A capacitive element according to claim 30 wherein said non-conductive layer comprises LiB₈ O₁₃ as the alkali metal borate glass.

32. A capacitive element according to claim 29 wherein said substrate is copper.

33. A capacitive element according to claim 1 wherein the amount of said glasses contained in said layer is equal to or less than about 5 vol % based on the total volume of the glasses and barium titanate in said layer.

34. A capacitive element according to claim 33 wherein said amount is equal to or less than about 2.5 vol %.