Pacemaker output switch protection

• US 4,739,437 A
• Filed: 10/22/1986
• Issued: 04/19/1988
• Est. Priority Date: 10/22/1986
• Status: Expired due to Term

• Current Assignee: Pacesetter Incorporated (Abbott Laboratories Incorporated)
• Original Assignee: Siemens Pacesetter, Inc. (Abbott Laboratories Incorporated)
• Inventors: Morgan, Wayne A.
• Primary Examiner(s): Pellinen, A. D.
• Assistant Examiner(s): DEBOER, TODD
• Application Number:
  US06/921,701
• Time in Patent Office: 545 Days
• Field of Search: 361/58, 361/77, 361/91, 361/88, 357/48, 357/86, 357/23.13, 307/246, 307/254, 128/419 PG
• US Class Current: 361/88
• CPC Class Codes: A61N 1/37 Monitoring; Protecting
• CPC Class Codes: A61N 1/3718 Monitoring of or protection against external electromagnetic fields or currents
• CPC Class Codes: H03K 17/08142 in field-effect transistor switches

Abstract

A protected output switch for an implantable medical device, such as a pacemaker, is disclosed. Through this output switch, a stimulation pulse is delivered from an internal storage element to an output terminal. The output switch includes a first N-channel MOSFET switch having its source terminal connected to the internal storage element and its drain terminal connected to the output terminal. The gate terminal of the N-channel MOSFET switches is connected to approriate logic switching signals. Included as part of the output switch is a second N-channel MOSFET switch having its source terminal connected to the P-well terminal of the first N-channel MOSFET switch, its drain terminal connected to the internal storage element, and its gate terminal connected to the output terminal. This second switch serves to block any potentials, whether internal or external, from being applied to the base of a parasitic NPN bipolar transistor that exists within the output switch. Should such NPN bipolar transistor be turned on, large potentially destructive currents could flow through the output switch.

Claims

1. An output switch serving to electrically connect a source node within a medical device to a destination node within said medical device in response to a control signal, said output switch including:

a first MOSFET switch formed in a first well region of a first polarity type within a substrate of a second polarity type, said first MOSFET switch having a first source terminal, a first drain terminal, a first gate terminal, and a first well terminal, said source terminal being connected to said source node, said drain terminal being connected to said destination node, said gate terminal being coupled to said control signal, and said first well terminal being connected to said first well region; and

a second MOSFET switch formed in a second well region of the first polarity type having a second source terminal, a second drain terminal, a second gate terminal, and a second well terminal, the second drain terminal being electrically connected to the first source terminal, the second source terminal being electrically connected only to the first and second well terminals, the second well terminal being connected to said second well region and the second gate terminal being electrically coupled to the first drain terminal.

2. The output switch of claim 1 further including a third MOSFET switch in parallel with said first MOSFET switch, a third source terminal of said third MOSFET switch being connected to said first source terminal, a third drain terminal of said third MOSFET switch being connected to said first drain terminal, and a third gate terminal of said third MOSFET switch being coupled to a gate signal, said gate signal being appropriately synchronized with said control signal, both said first MOSFET switch and said third MOSFET switch being in a conductive state so as to connect said source node to said destination node at substantially the same time in response to said control signal and said gate signal, respectively.

3. The output switch of claim 1 wherein said implantable medical device comprises a pacemaker having a stimulating lead adapted to be connected to a patient'"'"'s heart, said pacemaker having means for storing an electrical charge of a desired magnitude, said storing means being electrically connected to said source node and said stimulating lead being electrically coupled to said destination node, whereby the output switch delivers the electrical charge stored in said storing means to said stimulating lead in response to said control signal.

4. In an implantable medical device having MOSFET connection means therein for selectively connecting a first node within said medical device to a second node within said medical device, said MOSFET connection means being formed on a semiconductor substrate of a first polarity type and having at least one well region therein of a second polarity type, and wherein source and drain terminals of said MOSFET connection means include regions of said first polarity type within said well region, and further wherein the structure of said MOSFET connection means includes regions of said first polarity type separated by a region of said second polarity type, thereby forming a parasitic bipolar transistor through which potentially large currents can flow, a means for maintaining said parasitic bipolar transistor in an OFF condition, thereby preventing any potentially large currents from flowing through said parasitic bipolar transistor, said means for maintaining said parasitic bipolar transistor in an OFF condition comprising:

blocking means for preventing any electrical signals from being applied to a base terminal of said parasitic bipolar transistor in response to a blocking signal, said base terminal comprising the region of said second polarity type; and

control means for generating said blocking signal and applying it to said base terminal whenever it is desired to maintain said parasitic bipolar transistor in an OFF condition.

5. The implantable medical device of claim 4 wherein said blocking means comprises a first switch that switchably connects the base terminal of said parasitic bipolar transistor to the first node of said medical device, said first node also being connected to one of said source and drain terminals of said MOSFET connection means, and wherein the other of said source and drain terminals of said MOSFET connection means is connected to the second node of said medical device, and further wherein said control means maintains said first switch in an open position in the presence of any signals appearing on the second node of said medical device that might otherwise turn said parasitic bipolar transistor ON.

6. The switch protection means of claim 5 wherein said first switch comprises a first MOSFET switch formed on the same semiconductor substrate as is used for said MOSFET connection means, said first MOSFET switch having a first of its source/drain terminals connected to the base of said parasitic bipolar transistor, a second of its source/drain terminals connected to the first node of said medical device, and its gate terminal coupled to the second node of said medical device, whereby any activating signal appearing on said second node, either from a source external to said medical device or from said first node through said MOSFET connection means, is also coupled to the gate terminal of said first MOSFET switch, said activating signal causing said first MOSFET switch to assume an OPEN state, thereby blocking any signals from being applied to the base of said parasitic bipolar transistor.

7. The switch protection means of claim 6 wherein said MOSFET connection means comprises a second MOSFET switch having its source and drain terminals connected to the first and second nodes of said medical device, and wherein both said first and second MOSFET switches comprise N-channel MOSFET devices formed on an N-type semiconductor substrate material, each N-channel MOSFET device having respective P-well terminals, the P-well terminal of said second MOSFET switch being electrically connected to the P-well terminal of said first MOSFET switch, and the P-well terminal of said first MOSFET switch being electrically connected to the base of said parasitic bipolar transistor.

8. Output switch means for use in an implantable medical device for selectively delivering an electrical stimulating pulse to an output terminal, said output switch means causing an electrical potential stored in a storage element of said medical device to be electrically connected to said output terminal for a select period of time in response to a trigger signal, said trigger signal being generated by control logic within said medical device, said output switch means comprising:

a first semiconductor switch having a first source terminal connected to said storage element, a first destination terminal connected to said output terminal, and a first control terminal coupled to said control logic, said control logic presenting said trigger signal to said first control terminal whenever a stimulation pulse is desired at said output terminal, said trigger signal causing said first source terminal to be electrically connected to said first destination terminal;

second semiconductor switch means for switchably connecting a supply potential to said output terminal in response to a turn-on potential, said second semiconductor switch means having a second source terminal coupled to the supply potential, a second destination terminal connected to said output terminal, and a second control terminal, said turn-on potential being applied to said second control terminal; and

a third semiconductor switch having a third source terminal connected to the first source terminal of said first semiconductor switch, a third destination terminal connected to the second control terminal of said second semiconductor switch means, and a third control terminal, said third semiconductor switch being controlled so as to block the application of said turn-on potential to the second control terminal of said second semiconductor switch means.

9. The output switch means of claim 8 wherein said second semiconductor switch means comprises a bipolar transistor that undesirably results from the adjoining regions of doped semi-conductor material used to realize said first semiconductor switch.

10. The output switch means of claim 9 wherein said first and third semiconductor switches comprise N-channel MOSFET switches realized on a single N-type semiconductor substrate, each N-channel MOSFET switch having a P-well terminal associated therewith, the P-well terminal of said first N-channel MOSFET switch being electrically connected to the P-well terminal of the third N-channel MOSFET switch, this P-well connection also being electrically connected to the base of the bipolar transistor.