Self substrate bias generator formed in a well
First Claim
1. A self substrate bias generator comprising:
- a semiconductor substrate of a first conductivity type;
means for supplying first and second signals having substantially opposite phases;
a first capacitor in which said first signal is supplied to one electrode and the other electrode is connected to a first node;
a second capacitor in which said second signal is supplied to one electrode and the other electrode is connected to a second node;
a well of a second conductivity type formed in said semiconductor substrate; and
first to fourth MOS transistors formed in said well,wherein a current path of said first MOS transistor is connected between the substrate and said first node and its gate is connected to the first node,a current path of said second MOS transistor is connected between the substrate and said second node and its gate is connected to the second node,a current path of said third MOS transistor is connected between a predetermined potential and said first node and its gate is connected to the second node, anda current path of said fourth MOS transistor is connected between said predetermined potential and said second node and its gate is connected to the first node.
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Accused Products
Abstract
The invention relates to a self substrate bias generator. A well is formed in a semiconductor substrate. The first capacitor is connected between the terminal to which the first clock signal is supplied and the first node. The second capacitor is connected between the terminal to which the second clock signal, which has an opposite phase to the first signal, is supplied and the second node. The first to fourth transistors are formed in the well. For the first transistor, a current path is connected between the substrate and the first node and its gate is connected to the first node. For the second transistor, a current path is connected between the substrate and the second node and its gate is connected to the second node. For the third transistor, a current path is connected between a predetermined potential and the first node and its gate is connected to the second node. For the fourth transistor, a current path is connected between the predetermined potential and the second node and its gate is connected to the first node. If the substrate is of the P type, the charges are pumped from the substrate to the predetermined potential by the generator. In the case of the N-type substrate, the charges are pumped from the predetermined potential into the substrate.
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Citations
11 Claims
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1. A self substrate bias generator comprising:
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a semiconductor substrate of a first conductivity type; means for supplying first and second signals having substantially opposite phases; a first capacitor in which said first signal is supplied to one electrode and the other electrode is connected to a first node; a second capacitor in which said second signal is supplied to one electrode and the other electrode is connected to a second node; a well of a second conductivity type formed in said semiconductor substrate; and first to fourth MOS transistors formed in said well, wherein a current path of said first MOS transistor is connected between the substrate and said first node and its gate is connected to the first node, a current path of said second MOS transistor is connected between the substrate and said second node and its gate is connected to the second node, a current path of said third MOS transistor is connected between a predetermined potential and said first node and its gate is connected to the second node, and a current path of said fourth MOS transistor is connected between said predetermined potential and said second node and its gate is connected to the first node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification