Anisotropic silicon etching in fluorinated plasma

• US 4,741,799 A
• Filed: 11/17/1986
• Issued: 05/03/1988
• Est. Priority Date: 05/06/1985
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Chen, Lee, Mathad, Gangadhara S.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/931,909
• Time in Patent Office: 533 Days
• Field of Search: 156/643, 156/646, 156/657, 156/659.1, 156/662, 156/345, 252/79.1, 204/192.37, 427/38, 427/39
• US Class Current: 438/695
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment the etching ambient is a mixture of either NF₃ or SF₆, an inert gas such as nitrogen, and a polymerizing gas such as CHF₃ that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.

Claims

1. A mehtod of anisotropically etching a silicon body in a single etching step, comprising:

placing said silicon body in a gaseous plasma environment at a constant gas pressure and composition consisting essentially of a chlorine-free fluorine-containing etchant gas, and a polymer-forming gas for substantially limiting lateral etching of said silicon body, said polymer-forming gas consisting of one or more halogenated hydrocarbons wherein the halogen in each is fluorine.

2. The method of claim 1, wherein said etchant gas is selected from the group consisting of NF₃, SF₆ and the combination thereof.

3. The method of claim 1, wherein said polymer-forming gas comprises CHF₃.

4. The method of claim 1, wherein said gaseous plasma environment comprises a pressure of about 1-5 torr and a power density of about 2-5 watts/cm² at the surface of said silicon body.

5. The method of claim 1, wherein said silicon body to be etched comprises multiple layers of differently doped monocrystalline silicon or polycrystalline silicon or combinations thereof.

6. A method of anisotropically etching a silicon body in a single etching step, comprising:

placing said silicon body in a gaseous plasma environment at a constant gas pressure and composition consisting essentially of an inert gas, and a chlorine-free fluorine-containing etchant gas, and a polymer-forming gas for substantially limiting lateral etching of said silicon body, said polymer-forming gas consisting of one or more halogenated hydrocarbons wherein the halogen in each is fluorine.

7. The method of claim 6, wherein said inert gas comprises nitrogen.