Semiconductor charge-coupled device with an increased surface state

• US 4,742,381 A
• Filed: 05/15/1986
• Issued: 05/03/1988
• Est. Priority Date: 06/21/1985
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Fujii, Ichiro
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US06/863,674
• Time in Patent Office: 719 Days
• Field of Search: 357/24, 357/30, 357/63, 357/64, 357/91
• US Class Current: 257/230
• CPC Class Codes: H01L 29/1062 of charge coupled devices

Abstract

A semiconductor charge-coupled device is fabricated with use of a layer of a doped semiconductor having an insulator layer thereon. Suitable dopant ions such as nitrogen or argon ions are implanted into the doped semiconductor layer so that the projected range of the ions introduced into the semiconductor layer is located substantially at the interface between the doped semiconductor layer and the insulator layer for forming an interlevel layer providing an increased surface state at the aforesaid interface. Where the interlevel layer is formed by implantation of nitrogen ions the structure having the nitrogen ions implanted into the doped semiconductor layer is preferably annealed at a relatively high temperature. The charge-coupled device may be designed either as the surface-channel type or as the buried-channel type with a single-phase, two-phase, three-phase or four-phase driving scheme.

Claims

1. A semiconductor charge-coupled device comprising:

(a) a layer of a doped semiconductor,

(b) an insulator layer on the doped semiconductor layer,

(c) a plurality of transfer electrodes on the insulator layer, and

(d) an interlevel layer formed over a selected area of said interface between said doped semiconductor layer and said insulator layer to increase the surface state at said interface,

(e) an anti-blooming electrode on said insulator layer substantially in registry with said selected area of said interface between said doped semiconductor layer and said insulator layer and intervening between an adjacent two of said transfer electrodes along the surface of said insulator layer,

(f) first and second doped semiconductor regions in said doped semiconductor layer and doped to the same conductivity type to different dopant densities and located so that said interlevel layer intervenes therebetween along said interface between said doped semiconductor layer and said insulator layer.

2. A semiconductor charge-coupled device as set forth in claim 1, in which said semiconductor layer is doped to one conductivity type and each of said first and second doped semiconductor regions is doped to the other conductivity type.

3. A semiconductor charge-coupled device as set forth in claim 1, in which said interlevel layer contains ion-implanted nitrogen.

4. A semiconductor charge-coupled device as set forth in claim 1, in which said interlevel layer contains ion-implanted argon.